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Study of the Temperature Dependence of E2 and A1(LO) Modes in ZnO

Published online by Cambridge University Press:  01 February 2011

Esther Alarcon-Llado ,
Ramon Cusco ,
Jordi Ibanez ,
Luis Artus ,
Juan Jimenez ,
Buguo Wang  and
Michael Callahan
Esther Alarcon-Llado
Affiliation:
ealarcon@ija.csic.es, C.S.I.C., Inst. Jaume Almera, C. Sole Sabaris sn, Barcelona 08028, Spain
Ramon Cusco
Affiliation:
rcusco@ija.csic.es, C.S.I.C., Inst. Jaume Almera, C. Sole Sabaris sn, Barcelona, 08028, Spain
Jordi Ibanez
Affiliation:
jibanez@ija.csic.es, C.S.I.C., Inst. Jaume Almera, C. Sole Sabaris sn, Barcelona, 08028, Spain
Luis Artus
Affiliation:
lartus@ija.csic.es, C.S.I.C., Inst. Jaume Almera, C. Sole Sabaris sn, Barcelona, 08028, Spain
Juan Jimenez
Affiliation:
jimenez@fmc.uva.es, Univ. Valladolid, Departamento Física Materia Condensada, P. del Cauce sn, Valladolid, 47011, Spain
Buguo Wang
Affiliation:
Buguo@solidstatescientific.com, Solid State Scientific Corporation, 27-2 Wrigth Road, Hollis, NH, 03049, United States
Michael Callahan
Affiliation:
Michael.Callahan@hanscom.af.mil, Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA, 01731-2909, United States
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Abstract

Raman scattering measurements were carried out on a bulk, single crystal of wurtzite ZnO over a temperature range from 80 to 760 K and the temperature-dependent shift and broadening of the E2high and A1(LO) modes was analyzed. The E2high mode exhibits a visibly asymmetric line shape that can be related to the interaction with the continuum of acoustic two-phonon density of states. A Fermi resonance model was used to describe the E2high temperature dependence. On the other hand, the anharmonic shift and broadening of the A1(LO) mode are adequately accounted for by a decay model with a dominating Ridley channel involving TO and LA modes. Phonon lifetimes of ∼0.9 and 0.5 ps are found for the E2high and A1(LO) modes, respectively, which corroborates that anharmonic decay involves in both cases a three-phonon process. The A1(LO)lifetime is one order of magnitude lower than that of GaN, which suggests that hot phonon effects should be expected to play a less relevant role in carrier relaxation in ZnO as compared with GaN.

Keywords

Raman spectroscopyII-VIoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-11
Copyright
Copyright © Materials Research Society 2007

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References

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