Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T04:15:21.185Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of the Electronic Structure Near Individual Dislocations in Diamond by Energy-Loss Spectroscopy

Published online by Cambridge University Press:  26 February 2011

J. Bruley  and
P. E. Batson
J. Bruley
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
P. E. Batson
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
Get access

Abstract

Spatially resolved electron energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band-gap just below the 1s to bulk conduction band threshold energy, when compared to spectra recorded from neighboring defect free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the π* states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. A comparison is drawn between the measured near edge structure and calculations of local density of states reported in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 255
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shockley, W., Phys Rev. 91, 228 (1953)Google Scholar
2. Read, W.T., Phil. Mag., 45, 775 (1954)Google Scholar
3. A general review is given Hirsch, P.B., Mat. Sci. and Technol., 1, 666 (1985)Google Scholar
4. Hamers, R.J., Phys. Rev. B 40, 1657 (1989); and references therein.Google Scholar
5. Bruley, J. and Batson, P.E., Phys Rev., B 40, 9888 (1989)Google Scholar
6. Pennycook, S.J., Ultrmicroscopy, 7, 99 (1981)Google Scholar
7. See Berger, S.D. and Brown, L.M., Inst. Phys. Conf. Ser. 68, 115 (1983); and references therein.Google Scholar
8. Batson, P.E., Rev. Sci. Inst., 57 43 (1986); Rev., Sci. Inst., 59 1132 (1988).Google Scholar
9. Comelli, G., Stohr, J., Jark, W. and Pate, B., Phys. Rev. B 37, 4383 (1988)Google Scholar
10. Morar, J.F., Himpsel, F.J., Hollinger, G., Hughes, G. and Jordon, J.L., Phys. Rev. Lett., 54, 1960 (1985)Google Scholar
11. Painter, G.S., Ellis, D.E. and Lubinskey, A.R., Phys. Rev. B 4, 3610 (1971)Google Scholar
12. Weng, X., Rez, P., and Ma, H., Phys. Rev. B 40, 4175 (1989)Google Scholar
13. Bruley, J., Cuomo, J.J., Guarnieri, R., Whitehair, S.J., MRS proceedings, EA19, Technology update on diamond films, Ed. Chang, R.P.H., Nelson, D. and Hiraki, A., 99 (1989)Google Scholar
14. Morar, J.F., Himpsel, F.J., Hollinger, G., Hughes, G. and Jordon, J.L., Phys. Rev., 833, 1346 (1986)Google Scholar
15. See for example a review by Colliex, C., Advances in Optical and Electron Microscopy 9, (Eds. Barer, R. and Cosslett, V.E.) Academic Press (1984)Google Scholar
16. Yamamoto, N., Spence, J.C.H. and Fathy, D., Phil. Mag., B 49, 609 (1984)Google Scholar
17. Pepper, S.V., J. Vac. Sci. Technol., 20(3), 643 (1982)Google Scholar
18. Pirouz, P., Cockayne, D.J.H., Sumida, N., Hirsch, P.B. and Lang, A.R., Proc. Roy. Soc., A 386, 241 (1983)Google Scholar
19. Jones, R. and King, T., Physica, B, 116, 72 (1983); J. Phys. Paris 44, C4-461 (1983)Google Scholar
20. Persson, A., J Phys. Paris, 44, C4–453 (1983); Ph.D. Thesis, University of Umea, Sweden, (1983)Google Scholar
21. Morar, J.F., Himpsel, F.J., Hollinger, G., Hughes, G. and Jordon, J.L., Phys. Rev., B 33, 1340 (1986)Google Scholar