Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T07:16:12.304Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of the Effects of Implantation Dose and Annealing Temperature on the Formation of Buried Nitride SOI Structures

Published online by Cambridge University Press:  28 February 2011

M. B. Kerger ,
R. Kwor ,
M. Zeller ,
P. L. F. Hemment  and
K. J. Reeson
M. B. Kerger
Affiliation:
Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, IN 46556
R. Kwor
Affiliation:
Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, IN 46556
M. Zeller
Affiliation:
Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, IN 46556
P. L. F. Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
K. J. Reeson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
Get access

Abstract

Nitrogen implantation into single-crystal silicon can result in a buried nitride layer under proper processing conditions. SOI structures have been formed using this technique. The optimum parameters for forming a buried nitride layer with good insulating characteristics have been investigated. Nitrogen was implanted into <100> silicon at 200 keV at an implantatipp tem erature of 500°C. The effect of implantation doses of 1.05 × 1018N+/cm2, 1.3 × 1018N+/cm+ and 1.4 × 1018N+ /cm+ and post-implantation annealing temperatures of 1050, 1100, 1150, and 1200°C on the buried nitride layer was studied. Transmission Infrared Spectroscopy was used to determine the structure (amorphous or crystalline) of the buried nitride layer. The infrared spectra change as a function of annealing temperature, indicating the transition from amorphous to crystalline silicon nitride. Leakage currents through the structures were measured and SEM micrographs of the nitride surfaces were taken. The correlation between the IR results and these data will be presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 603
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dexter, R.J., Watelski, S.B., Picraux, S.T., Appl. Phys. Lett. 23, 455 (1973).Google Scholar
2. Bourguet, P., Dupart, J.M., Tiran, E.L., Auvray, P., GuivarcTh, A., Salvi, M., Pelous, G., Henoc, P.. J. Appl. Phys., 51, 6169 (1980).Google Scholar
3. Nesbit, L., Stiffler, S., Slusser, G., Vinton, H.. J. of Electrochem. Soc., 132, 2713 (1985).Google Scholar
4. Zimmer, G., Vogt, H., Belz, J. and Kaat, E. te, Abstract 79, Electrochem. Soc. Meeting, Boston, May (1986).Google Scholar
5. Tsujide, T., Nojiri, M., and Kitagawa, H., J. Appl. Phys., 51, 1605 (1980).Google Scholar
6. Hemment, P.L.F., Peart, R.F., Stephens, K.G., Chater, R.J., Kilner, J.A., Meekison, D., Booker, G.R. and Arrowsmith, R.P., Appl. Phys. Letts. 46, 952 (1985).Google Scholar
7. Hemment, P.L.F., Proc. MRS Fall Meeting, Boston, Dec.(1985).Google Scholar
8. Volgin, Y.N., Ukhanov, Y.I.. Optical Spectroscopy, 38, 412 (1975).Google Scholar
9. Luongo, J.P.. Appl. Spectroscopy, 38, 195 (1984).Google Scholar
10. Meekison, D., Booker, G.R., Reeson, K.J., Hemment, P.L.F., Chater, R.J., Kilner, J.A., and Davis, J.R., Low Energy Ion Beam 4, Univ. of Sussex, April (1986).Google Scholar