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Study of Near Surface Structure and Composition for High Dose Implantation of Cr+ into Si

Published online by Cambridge University Press:  25 February 2011

F. Namavar
Affiliation:
The University of Connecticut, Storrs, CT 06268;
J. I. Budnick
Affiliation:
The University of Connecticut, Storrs, CT 06268;
H. C. Hayden
Affiliation:
The University of Connecticut, Storrs, CT 06268;
F. A. Otter
Affiliation:
United Technologies Research Center, East Hartford, CT 06108
V. Patarini
Affiliation:
United Technologies Research Center, East Hartford, CT 06108
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Abstract

The dependence of the implanted layer composition on total dose, dose rate and target chamber environment for Cr+ implanted Si have been studied by means of Rutherford Back Scattering (RBS) and Auger Electron Spectroscopy (AES). Implantation of Cr+ for doses up to 2 × 1018 ions/cm2 and a fixed dose rate and energy were carried out in an ultra high vacuum (UHV) system as well as in a diffusion pumped vacuum (DPV) system. For the former, the maximum Cr concentration was about 42%. On the other hand, implantation of Cr in a DPV system resulted in a much higher peak concentration (86%) and retention.

Both the RBS and AES results positively demonstrate the existence of extensive surface carbon for a Si-rich surface and a chromium oxide layer for the Cr-rich surface. This result suggests that the interaction of oxygen or carbon occurs preferentially and depends on the surface composition.

No surface compositional variation could be observed by the RBS experiments for Cr implanted in a UHV system for different dose rates. In contrast, for implantation in a DPV system, higher concentrations can be achieved for lower dose rates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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Footnotes

Supported by the Office of Naval Research.

References

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