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A Study of Magnetic-Field-Induced Semimetal to Semiconductor Transition in AlxGai1-xSb/InAs Quantum Wells

Published online by Cambridge University Press:  21 February 2011

Ikai Lo ,
W.C. Mitchel  and
J.-P. Cheng
Ikai Lo
Affiliation:
Department of Physics, National Sun Yat-Sen University, P.O. Box 59-113, Kaohsiung 80424, Taiwan, R.O.C. WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-6533
W.C. Mitchel
Affiliation:
WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-6533
J.-P. Cheng
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have studied the carrier concentration dependence of the magnetic-field-induced semimetal-to-semiconductor transition in AlxGai1-xSb/lnAs quantum wells for the magnetic fields up to 24T. The electron carrier concentration in InAs well was varied by the negative persistent photoconductivity effect. We found that electrons and holes coexisted in x = 0.1 and 0.2 samples. In the x = 0.2 sample, the semimetallic phase turned into the semiconducting phase when the holes vanished at 5T. This semimetal-to-semiconductor transition shifted to a higher field when the electron carrier concentration decreased. The results are consistent with the theoretical band structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 317
Copyright
Copyright © Materials Research Society 1994

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