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A Study of Interfaces in GaAs/AlAs Superlatyices Using Phonons

Published online by Cambridge University Press:  25 February 2011

D. Gammon ,
B.V. Shanabrook ,
S. Prokes ,
D.S. Katzer ,
W. Tseng ,
B. Wilkins  and
H. Dietrich
D. Gammon
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
B.V. Shanabrook
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
S. Prokes
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
D.S. Katzer
Affiliation:
ONT Postdoctoral Fellow
B. Wilkins
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
H. Dietrich
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
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Abstract

Vibrational Raman scattering has been used in conjunction with luminescence, luminescence excitation spectroscopy, and x-ray diffraction to study the interfaces of GaAs/AlAs superlattices grown by MBE with and without growth interruptions at the interfaces. The confined LO phonon spectra clearly indicate that in the sample grown with growth interrupts at least one of the interfaces in each GaAs layer is truly smooth. In addition it is shown that the intensity of the interface phonons probed via Raman scattering is sensitive to the state of the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 357
Copyright
Copyright © Materials Research Society 1990

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References

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