Hostname: page-component-7479d7b7d-767nl Total loading time: 0 Render date: 2024-07-08T06:13:58.151Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Initial Stages of Heteroepitaxy Using Graded Thickness Samples

Published online by Cambridge University Press:  26 February 2011

D. K. Biegelsen ,
F. A. Ponce ,
B. S. Krusor ,
J. C. Tramontana  and
R. D. Yingling
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
B. S. Krusor
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
J. C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
R. D. Yingling
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
Get access

Abstract

In this paper we introduce the technique of graded thickness sample deposition to study the heteroepitaxial growth mechanisms of GaAs on Si. We can observe the continuous evolution from the initial clean surface, through nucleation, growth and coalescence of the deposited material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 437
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Bringans, R. D., Olmstead, M. A., Uhrberg, R. I. G., and Bachrach, R. Z., Apl. PHys. Lett. 51,523 (1987).Google Scholar
2.Biegelsen, D. K., Ponce, F. A., Smith, A. J., and Tramontana, J. C., J. Appl. Phys. 61, 1856 (1987).Google Scholar
3.Koch, S. M., Rosner, S. J., Hull, R., Yoffe, G. W., and Harris, S. J. Jr., J. Crystal Growth 81, 205 (1987).Google Scholar
4.Petroff, P. M., J. Vac. Sci. Technol. B 4, 874 (1986).Google Scholar
5.Krusor, B. S., Biegelsen, D. K., Yingling, R. D., and Abelson, J. R., J. Vac. Sci. Technol. B 5 (1988); in press.Google Scholar
6.Bringans, R. D., Uhrberg, R. I. G., Olmstead, M. A., Bachrach, R. Z., and Northrup, J. E., Phys. Rev. Lett. 55, 533 (1985).Google Scholar
7.Venables, J. A., J. Vac. Sei. Technol. B 4, 870 (1986).Google Scholar