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Study of High Nitrogen Compositions GaNAs and GaInNAs Material Quality by X-ray Diffraction and Photoluminescence

Published online by Cambridge University Press:  21 March 2011

T. K. Ng ,
S. F. Yoon ,
S. Z. Wang ,
W. K. Loke  and
W. J. Fan
T. K. Ng
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University, Nanyang Avenue, Singapore 639798. Email address: tienkhee@pmail.ntu.edu.sg
S. F. Yoon
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University, Nanyang Avenue, Singapore 639798. Email address: tienkhee@pmail.ntu.edu.sg
S. Z. Wang
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University, Nanyang Avenue, Singapore 639798. Email address: tienkhee@pmail.ntu.edu.sg
W. K. Loke
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University, Nanyang Avenue, Singapore 639798. Email address: tienkhee@pmail.ntu.edu.sg
W. J. Fan
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University, Nanyang Avenue, Singapore 639798. Email address: tienkhee@pmail.ntu.edu.sg
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Abstract

GaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 – 1.55 m m). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions > 2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840°C and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.4.1
Copyright
Copyright © Materials Research Society 2002

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