Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-17T09:56:20.294Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of Defects in Ordered Ternary Semiconductor Epilayers

Published online by Cambridge University Press:  22 February 2011

S. McKernan ,
C. B. Carter ,
D. P. Bour  and
J. R. Shealy
S. McKernan
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
D. P. Bour
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
J. R. Shealy
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
Get access

Abstract

Ordered GaxIn1-xP epilayers grown on GaAs substrates have been studied in the electron microscope. Dark-field images and high-resolution micrographs have directly revealed the presence of an ordering of the Ga and In (111) planes. Several different planar defects have been identified in the ordered structure. There is a very high density of faults parallel to the (001) growth surface. Models for these faults have been constructed in terms of stacking faults and twin boundaries in the ordered structure. Other flat planar defects which occur approximately parallel to (111) and (111) planes can also be described in these terms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 111
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 McKernan, S., Carter, C.B., Bour, D., and Shealy, J.R., Mat. Res. Soc. Symp. Proc., 104, 637 (1987)Google Scholar
2 McKernan, S., Carter, C.B., Bour, D., and Shealy, J.R., J. Mater. Res. 3, 406 (1988).Google Scholar
3 McKernan, S., Carter, C.B., Bour, D., and Shealy, J.R., Proc. 46th annual EMSA meeting, p902 (1988)Google Scholar
4 Srivastava, G.P., Martins, J.L. and Zunger, A., Phys. Rev. B 31, 2561 (1985).Google Scholar
5 Martins, J.L. and Zunger, A., J. Mater. Res. 1, 523 (1986).Google Scholar
6 Kuan, T.S., Keuch, T.F., Wang, W.I. and Wilkie, E.L., Phys. Rev. Lett. 54, 201 (1985).Google Scholar
7 Jen, H.R., Cherng, M.J. and Stringfellow, G.B., Appl. Phys. Lett. 48, 1603 (1986).CrossRefGoogle Scholar
8 Shahid, M.A., Mahajan, S., Laughlin, D.E. and Cox, H.M., Phys. Rev. Lett. 58, 2567 (1987)Google Scholar
9 Gomyo, A., Suzuki, T., Kobayashi, K., Kawata, S., Hino, I. and Yuasa, T., Appl. Phys. Lett. 50, 637 (1987).Google Scholar
10 Kilaas, R., Proc. 45th EMSA meeting, p66 (1987)CrossRefGoogle Scholar
11 Synoptics Ltd., 15 The Innovation Centre, Milton Rd., Cambridge, CB4 4BH, UKGoogle Scholar