Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-28T04:15:55.393Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of Copper Oxide Films Fabricated by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

R. E. Leuchtner  and
L. S. Hristakos
R. E. Leuchtner
Affiliation:
Department of Physics, University of New Hampshire, Durham NH 03824
L. S. Hristakos
Affiliation:
Department of Physics, University of New Hampshire, Durham NH 03824
Get access

Abstract

Copper oxide films were grown using the pulsed laser deposition (PLD) method with either a copper metal or a copper oxide target. A variety of deposition pressures of oxygen (0.001–0.3 torr) and temperatures (350, 450, and 550°C) were explored. From x-ray diffraction analysis, epitaxial <100> CuO films were observed at 450°C and either at 0.01 or 0.1 torr for the CuO and the Cu targets, respectively. Deposition rates were measured for the two targets (Cu and CuO) as a function of laser fluence and background gas pressure and enabled a morphological study of films prepared at different laser fluences but of similar film thickness (∼0.3 μm). The number density of particulates as well as the smoothness of the underlying film surface of the CuO films varied significantly with the target composition. The CuO films from the Cu target were the smoothest and had the fewest particulates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 551
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gupta, A. et al. , Physica C 200, 263 (1992).Google Scholar
2. Holzapfel, B. et al. , Appl. Phys. Lett. 61,3178 (1992).Google Scholar
3. Gutasarma, P. et al. , Physica C 203, 129 (1992).Google Scholar
4. Curtis, L.A. et al. , Mat. Res. Soc. Symp. Proc. 99, 95 (1998).Google Scholar
5. Chrisey, D.B. and Inam, A., MRS Bulletin XVII, (Feb 92), No 2, p.37.Google Scholar
6. Collins, B.T. et al. , J. Less Common Met. 156, 341 (1989).Google Scholar
7. Teh, C.K. and Weichman, F.L., Can J. Phys. 61, 1423 (1983).Google Scholar
8. Randith, E. and Allered, D.D., Thin Solid Films 83, 393 (1981).Google Scholar
9. Tanaka, T., Jpn. J. Appl. Phys. 18, 1043 (1979).Google Scholar
10. Roos, A. and Karlsson, B., Sol. Energy Mater. 7, 467 (1983).Google Scholar
11. Cheung, J. and Sankur, H., CRC Crit. Rev. 15, 63 (1988).Google Scholar
12. Ramesh, R. et al. , Science 252, 944 (1991).Google Scholar
13. Tarsa, E.J. et al. , J. App. Phys. 73, 3276 (1993).Google Scholar
14. Ogale, S.B. and Nawathey, R., J. App. Phys. 65, 1367 (1989).Google Scholar
15. Leuchtner, R.E., to be published.Google Scholar
16. Hristakos, L., Masters Thesis, Department of Physics, UNH (Dec. 1995).Google Scholar
17. Park, S. et al. , Appl. Phys. Lett. 58, 2565 (1991).Google Scholar