Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-25T04:50:40.548Z Has data issue: false hasContentIssue false

Study of Coercivity-enhanced Ruthenium-doped La0.67Sr0.33MnO3 Thin Films for Pseudo Spin Valve Devices

Published online by Cambridge University Press:  01 February 2011

Yuk Kwan Chan
Affiliation:
helios.chan@gmail.com, The Hong Kong Polytechnic University, Department of Applied Physics, DE703b, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, Hong Kong, N/A, China, People's Republic of, +85234003256
Wang Fai Cheng
Affiliation:
05900408rr@polyu.edu.hk, The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong, N/A, China, People's Republic of
Hon Kit Lau
Affiliation:
07900822r@polyu.edu.hk, The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong, N/A, China, People's Republic of
Chi Wah Leung
Affiliation:
apleung@inet.polyu.edu.hk, The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong, N/A, China, People's Republic of
Get access

Abstract

This investigation focused on the study of La0.67Sr0.33MnO3 (LSMO) thin films with 5 atomic percent Ru-doping (LSMRO). Specifically, we fabricated epitaxial LSMO and LSMRO thin films on LaAlO3 (LAO) (001) substrates by pulsed laser deposition. Resistance- temperature measurement results showed that the Curie temperature (Tc) of LSMRO thin film deposited under an oxygen ambient pressure of 150 mTorr at 830 °C was above room temperature. Hysteresis measurements and anisotropic magnetoresistance (AMR) results confirmed that coercivity of the optimized LSMRO films, as compared with that of LSMO films, can be greatly increased at low temperatures. The study successfully demonstrated the coercivity enhancement effect of Ru-doping on LSMO thin films deposited on LAO substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chappert, C., Fert, A., and Dau, Van, Frederic Nguyen, Nat Mater 6, 813 (2007).Google Scholar
2. Gross, R., Magnetic Tunnel Junctions Based on Half-Metallic Oxides, (2006).Google Scholar
3. Hueso, L. E. Granja, L. Levy, P. and Mathur, N. D. J. Appl. Phys. 100, 023903 (2006).Google Scholar
4. Ogimoto, Y. et al. , Jpn. J. Appl. Phys 42, L369 (2003).Google Scholar
5. Ishii, Y. Yamada, H. Sato, H. Akoh, H. Kawasaki, M. and Tokura, Y. Appl. Phys. Lett. 87, 022509 (2005).Google Scholar
6. Wang, L. M. Lai, J. Wu, J. Kuo, Y. K. and Chang, C. L. J. Appl. Phys. 102, 023915 (2007).Google Scholar
7. Yamada, H. Kawasaki, M. and Tokura, Y. Appl. Phys. Lett. 86, 192505 (2005).Google Scholar
8. Haghiri-Gosnet, A. and Renard, J. J. Phys. D 36, R127 (2003).Google Scholar
9. Koubaa, M. et al. , J. Appl. Phys. 93, 5227 (2003).Google Scholar
10. Wu, W. Wong, K. H. Li, X.-., Choy, C. L. and Zhang, Y. H. J. Appl. Phys. 87, 3006 (2000).Google Scholar
11. Cheng, W. F. and Leung, C. W. Acta Phys Pol A 111, 117 (2007)Google Scholar
12. Favre-Nicolin, E. and Ranno, L. J Magn Magn Mater 272-276, 1814.Google Scholar
13. Dho, J. Hur, N. H. Kim, I. S. and Park, Y. K. J. Appl. Phys. 94, 7670 (2003).Google Scholar
14. Gor'kov, L. P. and Kresin, V. Z. Physics Reports 400, 149 (2004).Google Scholar