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Study of Bandgap Profiling Control on Photovoltaic Performance in the Three Stacked Amorphous Solar Cells

Published online by Cambridge University Press:  25 February 2011

Y. Nakata
Affiliation:
Energy Conversion Laboratories SHARP CORPORATION 282–1 Shinjo-cho, Kitakatsuragi-gun, Nara 639–21, Japan
H. Sannomiya
Affiliation:
Energy Conversion Laboratories SHARP CORPORATION 282–1 Shinjo-cho, Kitakatsuragi-gun, Nara 639–21, Japan
S. Moriuchi
Affiliation:
Energy Conversion Laboratories SHARP CORPORATION 282–1 Shinjo-cho, Kitakatsuragi-gun, Nara 639–21, Japan
A. Yokota
Affiliation:
Energy Conversion Laboratories SHARP CORPORATION 282–1 Shinjo-cho, Kitakatsuragi-gun, Nara 639–21, Japan
Y. Inoue
Affiliation:
Energy Conversion Laboratories SHARP CORPORATION 282–1 Shinjo-cho, Kitakatsuragi-gun, Nara 639–21, Japan
M Itoh
Affiliation:
Energy Conversion Laboratories SHARP CORPORATION 282–1 Shinjo-cho, Kitakatsuragi-gun, Nara 639–21, Japan
H Itoh
Affiliation:
Energy Conversion Laboratories SHARP CORPORATION 282–1 Shinjo-cho, Kitakatsuragi-gun, Nara 639–21, Japan
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Abstract

A series of systematic experiments has been made on a bandgap profiling control using a-SiGe and a-SiC cells to clarify the cause for the improvement of the photovoltaic performance by the bandgap profiling in the photovoltaic active layer. It has been shown from the analysis that the most important contribution to the cell performance is an optimization of the ambipolar carrier collection by the bandgap profiling. On the basis of the results, an efficiency of 10.1% was obtained at the promising a-SiC/a-Si/ a-SiGe multi-bandgap stacked cell by the bandgap profiling.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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