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A Study of Band Alignment in GaAs/GaInP(Partially Ordered) Heterostructures with High Pressure

Published online by Cambridge University Press:  10 February 2011

K. Uchida ,
P. Y. Yu ,
J. Zeman ,
S. H. Kwok ,
K. L. Teo ,
Z. P. Su ,
G. Martinez ,
T. Arai  and
K. Matsumoto
K. Uchida
Affiliation:
Department of Communications and Systems, University of Electro-communications, Choru, Tokyo, Japan.
P. Y. Yu
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
J. Zeman
Affiliation:
Grenoble High Magnetic Field Lab., MPI-FKF/CNRS, Grenoble Cedex 9, France.
S. H. Kwok
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
K. L. Teo
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
Z. P. Su
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
G. Martinez
Affiliation:
Grenoble High Magnetic Field Lab., MPI-FKF/CNRS, Grenoble Cedex 9, France.
T. Arai
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300–33, Japan.
K. Matsumoto
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300–33, Japan.
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Abstract

In this paper we review the use of high pressure techniques to investigate the optical properties of partially ordered GalnP epitaxial layers grown on GaAs substrates. In particular, we demonstrate the ability of high pressure to modify the band alignment at the GalnP/GaAs interface and hence to alter the optical properties of heterostructures fabricated from partially ordered GalnP on GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 499: Symposium DD – High Pressure Materials Research , 1997 , 381
Copyright
Copyright © Materials Research Society 1998

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References

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