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Studies of the Microscopic Nature of Cu-Pairs in Silicon

Published online by Cambridge University Press:  10 February 2011

A.A. Istratov ,
T. Heiser ,
H. Hieslmair ,
C. Flink  and
E.R. Weber
A.A. Istratov
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, istratov@socrates.berkeley.edu
T. Heiser
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, istratov@socrates.berkeley.edu
H. Hieslmair
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, istratov@socrates.berkeley.edu
C. Flink
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, istratov@socrates.berkeley.edu
E.R. Weber
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720-1760, istratov@socrates.berkeley.edu
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Abstract

Studies of the thermal dissociation kinetics of Cu-pairs in p-type silicon revealed that the dissociation energy of the pairs is 1.02±0.07 eV, which is twice as large as the binding energy of a coulombically bound donor-acceptor pairs formed by singly charged ions placed on nearest neighbor <111> sites. The dependence of the hole emission rate from the center versus electric field in the depletion region was found to be much weaker than predicted by the Pool-Frenkel law. On the other hand, the polarization potential describing emission from a neutral impurity gave a satisfactory fit to the experimental data. It is concluded that the Cu-pair is a donor with either covalent or mixed type of bonding of interstitial and substitutional copper atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 355
Copyright
Copyright © Materials Research Society 1998

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