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Studies of Crystalunity for Sputter Deposited Bi-Based Oxide Films

Published online by Cambridge University Press:  26 February 2011

Koichi Mizuno
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
Yo Ichikawa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
Kentaro Setsune
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
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Abstract

Crystalline quality of Bi-based oxide films has been evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2Cu1O8-δ (BSCO) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO(100) and SrTiO3(100) substrates at the low temperature of 650°C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3(100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec).

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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