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Structure-Property Relationship of Ion-Beam Sputtered Nd-Fe-B Magnetic Thin Films On (111) Silicon

Published online by Cambridge University Press:  21 February 2011

Anthony S. Nazareth ,
Harsh Deep Chopra ,
D. K. Sood  and
R. B. Zmood
Anthony S. Nazareth
Affiliation:
Dept. of Electrical Engineering, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne 3000, Australia
Harsh Deep Chopra
Affiliation:
Dept. of Materials Engineering, Monash University, Clayton, Victoria 3168, Australia
D. K. Sood
Affiliation:
Dept. of Electrical Engineering, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne 3000, Australia
R. B. Zmood
Affiliation:
Dept. of Electrical Engineering, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne 3000, Australia
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Abstract

A focussing grid broad beam Kaufman source, using argon ions on a target of nominal composition Nd2Fei4B has been employed to sputter deposit magnetic thin films of thicknesses ranging from 800 â to 1300 â on silicon-(lll) substrates at room temperature. These films were characterised for their composition depth profile by Rutherford Backscattering Spectroscopy, while x-ray diffraction was used to study the crystallographic structure. Due to a close match between (111) Si with (220) Nd2Fej4B lattice spacings, preferred crystallographic texturing was expected, and experimental results showed a greatly enhanced (220) texture. The degradation in magnetic properties was attributed to the presence of oxygen in the films as indicated by concentration depth profiles. It is premised that another significant role of oxygen may be to relieve the misfit strain across the interface by its incorporation within the Nd2Fej4B phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 511
Copyright
Copyright © Materials Research Society 1995

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