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The Structure of the Boron-Hydrogen Complex in Silicon

Published online by Cambridge University Press:  26 February 2011

A. D. Marwick ,
G. S. Oehrlein ,
J. H. Barrett  and
N. M Johnson
A. D. Marwick
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
G. S. Oehrlein
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
J. H. Barrett
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
N. M Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Channeling and lattice location has been used to investigate the structure of the boron-hydrogen complex in crystalline silicon. The positions of both the boron and hydrogen atoms have been determined. The results are compared with Monte-Carlo simulations. The boron atom in the B-H pair is found to be displaced from a substitutional site by 0.28±0.03Å, while the hydrogen atom is predominantly at a bond-center site, with a small proportion in a back-bonded position.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 259
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1]Assali, Lucy V. and Leite, Jose R., Phys. Rev. Letts. 55 (1985) 980.Google Scholar
[2]Baranowski, Jacek M.and Tatarkiewicz, Jakub, Phys. Rev. B35 (1987) 7450.Google Scholar
[3]Barrett, John H., Phys. Rev. B 3 (1971) 1527.Google Scholar
[4]Capizzi, M. and Mittiga, A., Appl. Phys. Lett. 50 (1987) 918.Google Scholar
[5]Corbett, J.W., Sahu, S.N., Shi, T.S., and Snyder, L.C., Phys. Lett. 93A (1983) 303.Google Scholar
[6]DeLeo, Gary G. and Fowler, W. Beall, Proc. 13th Int. Conf. on Defects in Semiconductors, ed. Kimerling, L.C. and Parsley, J.M., Jr., (Met. Soc. AIME, 1985) 745.Google Scholar
[7]DeLeo, Gary G. and Fowler, W. Beall, Phys. Rev. B 31 (1985) 6861.Google Scholar
[8]Johnson, N.M., Phys. Rev. B 31 (1985) 5525.Google Scholar
[9]Johnson, N.M., Ponce, F.A., Street, R. A, and Nemanich, R.J., Phys. Rev. B 35 (1987) 4166.Google Scholar
[10]Ligeon, E. and Bontemps, A., J. Radioanal. Chem. 12 (1970) 335.Google Scholar
[11]Marwick, A.D., Oehrlein, G.S., and Johnson, N.M, Phys. Rev. B 36 (1987) 4539.Google Scholar
[12]Moller, W. and Besenbacher, F., Nucl. Instr. Methods 168 (1980) 111.Google Scholar
[13]Nielsen, B.B., Mat. Res. Soc. Symp. 59 (1986) 487.Google Scholar
[14]Pankove, J.I., Zanucchi, P.Z., Magee, C.W., and Lucovsky, G., Appl. Phys. Lett. 46 (1985) 421.Google Scholar
[15]Pankove, J. I., Carlson, D.E., Berkeyheiser, J.E., and Wance, R.O., Phys. Rev. Letts. 51 (1983) 2224.Google Scholar
[16]Pantelides, S. T., Appl. Phys. Lett. 50 (1987) 995.Google Scholar
[17]Pearton, S.J., Corbett, J.W., and Shi, T.S., Appl. Phys. A43 (1987) 153.Google Scholar
[18]Snyder, L.C. and Corbett, J.W., Mat. Res. Soc. Symp. 59 (1986) 259.Google Scholar
[19]Tavendale, A.J., Alexiev, D., and Williams, A.A., Appl. Phys. Lett. 47 (1985) 316.Google Scholar
[20]Thewalt, M.L.W., Lightowlers, E.C., and Pankove, J.I., Appl. Phys. Lett. 46 (1985) 689.Google Scholar
[21]Van de Walle, C.G., Bar-Yam, Y., and Pantelides, S.T., to be published.Google Scholar
[22]Wichert, Th., Skudlik, H., Deicher, M., Grubel, G., Keller, R., Recknagel, E., and Song, L., Phvs. Rev. Lett. 59 (1987) 2087.Google Scholar