Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-04T07:31:47.415Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure of the 2H-Ain/6H-SiC Interface

Published online by Cambridge University Press:  15 February 2011

P. Vermaut ,
P. Ruterana ,
G. Nouet  and
H. Morkoç
P. Vermaut
Affiliation:
Lermat Ura CNRS N° 1317, ISMRA;, 6 Blvd du Maréchal Juin, 14050 Caen Cedex, France, philippe@leririsl.ismra fr
P. Ruterana
Affiliation:
Lermat Ura CNRS N° 1317, ISMRA;, 6 Blvd du Maréchal Juin, 14050 Caen Cedex, France, philippe@leririsl.ismra fr
G. Nouet
Affiliation:
Lermat Ura CNRS N° 1317, ISMRA;, 6 Blvd du Maréchal Juin, 14050 Caen Cedex, France, philippe@leririsl.ismra fr
H. Morkoç
Affiliation:
University of Illinois, Materials Research Laboratory, Urbana, Illinois, IL 61801 USA
Get access

Abstract

Steps at the AIN/SiC interface have been investigated by HREM. Some of them do not introduce any defects. Others steps present a dislocation character which can contribute to relieve the strain due to the lattice mismatch. A third kind of steps gives rise to a prismatic planar fault for which a model is given. A reaction between prismatic and basal stacking faults is analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 551
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. appl. Phys., 76, 1363 (1994).Google Scholar
2. Lin, M. E., Sverdlov, B., Zhou, G. L., and Morkoç, H., Appl. Phys. Lett. 62, 3479 (1993).Google Scholar
3. Kuznia, J. N., AsifKhan, M., and Olson, D. T., J. appl. Phys, 73, 4700 (1993).Google Scholar
4. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., Botchkarev, A., Sverdlov, B., and Morkog, H., Proceeding of the IXth Conference on Microscopy of Semiconducting Materials, Inst. of Phys. Conf Series N° 146, 289 (1995).Google Scholar
5. Ponce, F. A., Krusor, B. S., Major, J. S., Piano, W. E., and Welch, D. F., Appl. Phys. Left. 67, 410 (1995).Google Scholar
6. Tanaka, S., Kern, R. S., Davis, R. F., Appl. Phys. Lett. 66, 37 (1994)Google Scholar
7. Sverdlov, B. N., Martin, G. A., Morkoç, H., and Smith, D. J., Appl. Phys. Left. 67, 2063 (1995).Google Scholar
8. Lin, M. E., Strite, S., Agarwal, A, Salvador, A., Zhou, G L, Teraguchi, N, Rockett, A., and Morkoç, H., Appl. Phy.s. Lett. 62, 702 (1993).Google Scholar
9. Stadelmann, P. A., Ultramicroscopy, 21, 131 (1987).Google Scholar
10. Vermaut, P., Ruterana, P., Nouet, G., and Morkoç, H., submitted for publication in Phil. Mag. A. Google Scholar
11. Hirth, J. P. and Lothe, J., Theory of dislocations, Second Edition, edited by Interscience, Wiley, p. 354 (1982).Google Scholar
12. Drum, C. M., Phil. Mag. A, 11, 313 (1965).Google Scholar