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Structure of Single-Crystal Gd2 O3 Films on GaAs(100)

Published online by Cambridge University Press:  10 February 2011

A. R. Kortan ,
M. Hong ,
J. Kwo ,
J. P. Mannaerts  and
N. Kopylov
A. R. Kortan
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974–0636
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974–0636
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974–0636
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974–0636
N. Kopylov
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974–0636
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Abstract

We have studied the single-crystal Gd2 O3 films grown epitaxially on GaAs(100) substrate with single-crystal x-ray diffraction. The sesquioxide Gd2 O3 forms two hexagonal phases, one monoclinic and one cubic phase in bulk form. In our studies of different thickness films, we have found that the Gd2 O3 grows only in the cubic phase with a unique epitaxial orientation. The two-fold (110) planes of the Gd2 O3 are oriented parallel to the four-fold GaAs(100) surface, while alligning its [001] and [110] axes with the [011] and [011] axes of GaAs within the plane, respectively. The film chooses only one of the two such possible orientations, which can be explained by the local bonding configuration at the interface. We find evidence for an elastic strain in the films less than 50 A thick.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 21
Copyright
Copyright © Materials Research Society 1999

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References

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