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Structure of Perturbed Twin Boundaries in Silicon

Published online by Cambridge University Press:  22 February 2011

Anita Garg ,
W. A. T. Clark  and
J. P. Hirth
Anita Garg
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
W. A. T. Clark
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
J. P. Hirth
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
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Abstract

Silicon bicrystals containing Σ =3(60°/[111]1,2) twin boundaries have been fabricated by sintering together single crystal (IMi) :vafers (which deviated from the exact (111) by upto ±4′). Transmission electron microscopic investigation revealed the boundaries to be near-twin boundaries having a superposed tilt component. The grain boundary dislocation structure of these boundaries has been studied in a transmission electron microscope (TEM) and interpreted as arising from the interaction of a large tilt component with a smaller twist component, to give the observed low energy configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 101
Copyright
Copyright © Materials Research Society 1988

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References

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