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Structure of Isolated Oxygen Impurity States in InN

Published online by Cambridge University Press:  01 February 2011

Dimiter Alexandrov ,
Scott Butcher ,
Nikolaus Dietz  and
Hang Yu
Dimiter Alexandrov
Affiliation:
dimiter.alexandrov@lakeheadu.ca, Lakehead University, Electrical Engineering, 955 Oliver Road, Thunder Bay, P7B5E1, Canada, (807)343-8311
Scott Butcher
Affiliation:
sbutcher@bluglass.com.au, BluGlass Limited, 74 Asquith Street, SILVERWATER, NSW 2128, Australia
Nikolaus Dietz
Affiliation:
ndietz@gsu.edu, Georgia State University, Department of Physics and Astronomy, 29 Peachtree Center Avenue, Atlanta, GA, 30302-4106, United States
Hang Yu
Affiliation:
hyu@lakeheadu.ca, Lakehead University, Department of Electrical Engineering, 955 Oliver Road, Thunder Bay, P7B5E1, Canada
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Abstract

The electron state structure of isolated interstitial O atoms in real InN (containing clusters of InN, clusters of InON and clusters of non-stoichiometric InN:In) is the subject of investigation in this paper. It is shown that for the interstitial O atoms the corresponding symmetry is equivalent to that of an O atom in vacuum if the dielectric permittivity of InN is considered, and therefore the hydrogen like impurity atom analysis can be applied for isolated interstitial O atoms hosted in a real InN lattice. It is found that: i) If the O atom is interstitially incorporated in a cluster of pure InN the impurity state has an energy of -5.11 eV, which acts as a donor level with ionization energy +0.06 eV, and also this state is a donor level with an ionization energy of -0.02 eV for a cluster of InON if this cluster occurs at a distance of less than 30 Angstroms; ii) The impurity state has energy -5.15 eV if the O atom is interstitially incorporated in a cluster of InON, which acts as a donor level with ionization energy +0.02 eV, and also this state is a donor level with ionization energy +0.10 eV for a cluster of InN if this cluster occurs on a distance less than 60 Angstroms from the O atom. iii) If the O atom is interstitially incorporated in cluster of non-stoichiometric InN:In the impurity state has energy -5.38 eV, which is in the valence band of this cluster. However this state acts as donor level for both cluster of InN and cluster of InON if they are on distance less that 59 Angstroms from the O atom. The donor ionization energy for the first cluster is +0.33 eV, and for the second cluster it is +0.25 eV.

Keywords

III-VOnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q09-15
Copyright
Copyright © Materials Research Society 2008

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References

1. Butcher, K.S.A., Wintrebert-Fouquet, M., , Motlan, Shrestha, S. K., Timmers, H., Prince, K. E. and Tansley, T. L., Proceeding of 2002 MRS Fall Meeting, Boston, MA, USA (2002).Google Scholar
2. Wu, J. et al. , Applied Physics Letters, 80, 3967 (2002)Google Scholar
3. Davydov, V. Yu. et al. , Physica Status Solidi (b), 234, 787 (2002)Google Scholar
4. Alexandrov, D., Butcher, K.S.A., Wintrebert-Fouquet, M., Journal of Crystal Growth, 269, 77 (2004)10.1016/j.jcrysgro.2004.05.036Google Scholar
5. Alexandrov, D., Butcher, S., Tansley, T., Physica Status Solidi (b), 203, 25 (2006)Google Scholar
6. Alexandrov, D., Journal of Crystal Growth, 246, 325 (2002)Google Scholar
7. Harrison, W. A., fiElectronic Structure and the Properties of Solidsfl, Dover Publ. Inc, (1989)Google Scholar
8. Herman, F., Skillman, B., “Atomic Structure Calculations”, Prentice Hall (1963)Google Scholar
9. Fritzsche, H., Journal of Non-Crystalline Solids, 6, 49 (1971)Google Scholar
10. Efros, A., Shklovskii, B., “Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin – Heidelberg (1984)Google Scholar
11. Landau, L. D., Lifshitz, E. M., “Quantum Mechanics (Non-Relativistic Theory)”, 2ndrevised edition, Pergamon Press, Oxford (1965)Google Scholar
12. Alexandrov, D., Butcher, S., Tansley, T., Proceeding of International Conference on Optical and Optoelectronic Properties of Materials and Applications, ICOOPMA2006, 17 July – 21 July 2006, Darwin, Australia (2006)Google Scholar