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Structure Determination of B4C and SiC Thin Films Via Synchrotron High-Resolution Diffraction

Published online by Cambridge University Press:  10 February 2011

J. Hershberger ,
F. Kustas ,
Z. U. Rek ,
S. M. Yalisove  and
J. C. Bilello
J. Hershberger
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI
F. Kustas
Affiliation:
Technology Assessment and Transfer, Annapolis, MD
Z. U. Rek
Affiliation:
Stanford Synchrotron Radiation Laboratory, Menlo Park, CA.
S. M. Yalisove
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI
J. C. Bilello
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI
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Abstract

Thin films of B4C and SiC deposited by magnetron sputtering as components of multilayers have the potential to provide significant property improvements over current wear resistant coating technology. B4C and SiC have previously been found to be amorphous and possibly nanocrystalline under the deposition conditions used. This study reports results of synchrotron x-ray scattering experiments providing information on the degree of crystallinity, strain, average density, and coordination number in 2000 Å films of these compounds on Si substrates. Radial distribution functions from B4C and SiC thin films were obtained and used to model the structure. Strain results are compared with Double Crystal x-ray Diffraction Topography (DCDT) results as a means for establishing a standard strain state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 635
Copyright
Copyright © Materials Research Society 1998

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References

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