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Structure and Properties of WNx Thin Film on GaAs Substrate

Published online by Cambridge University Press:  25 February 2011

Dali Mao ,
Weili Yu ,
Dongliang Lin  and
T.L. Lin
Dali Mao
Affiliation:
Shanghai Jiao Tong University, Department of Materials Science and Engineering, Shanghai 200030, P.R.China
Weili Yu
Affiliation:
Materials Engineering, Auburn University, Auburn, AL36849, USA
Dongliang Lin
Affiliation:
Shanghai Jiao Tong University, Department of Materials Science and Engineering, Shanghai 200030, P.R.China
T.L. Lin
Affiliation:
Shanghai Jiao Tong University, Department of Materials Science and Engineering, Shanghai 200030, P.R.China
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Abstract

In this paper, the effect of sputtering parameters on the interfacial reaction and the electronic properties of the WNx system were reported.

The report showed that W and W2 N phases were observed in WNx film on GaAs substrate annealed at 800–900°C, in which no UN phase was found and W2N was the stable phase. Throughout the WNx film, W,N distributed uniformly. There was no interdiffusion between WN, films and GaAs substrate annealed at 80°C. However, at 900°C, there was some N in-diffusion to substrate, but no Ga or As out-diffusion. The electrical resistivity p of WNx films increased with increasing nitrogen partial pressure r. All the samples with r<0.2 showed the p below 200 µΩcm. By the I/V measurement, the Schottky Barrier Height was obtained with the value: øB=0.93ev, n=1.30 for WNx/n-GaAs contact that annealed at 850°C, 15 minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 409
Copyright
Copyright © Materials Research Society 1991

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References

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