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Structure and Properties of The Oxygen Donor

Published online by Cambridge University Press:  28 February 2011

L. C. Kimerling
L. C. Kimerling*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

During aggregation, an assembly of oxygen atoms in silicon produces an electrically active site. The center is an effective mass, helium-like center (double donor) with a wave function of C2v symmetry. The formation reactions of the assembly reveal details of the invisible early stages of aggregation. The donor character of the center controls the aggregation process in heavily doped material. The atomic structure and the source of the electrical activity of the center remain unresolved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 83
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Kaiser, W., Frisch, H. L., and Reiss, H., Phys. Rev. 112, 1546 (1958).CrossRefGoogle Scholar
2. Wruck, D. and Gaworzewski, P., Phys. Stat. Sol. a56, 557 (1979).Google Scholar
3. Kimerling, L. C. and Benton, J. L., Appl. Phys. Lett. 39, 410 (1981).CrossRefGoogle Scholar
4. Stavola, M., Patel, J. R., Kimerling, L. C. and Freeland, P. E., Appl. Phys. Lett. 42, 73 (1983).Google Scholar
5. Mikkelsen, J. C., Appl. Phys. Lett. 40, 336 (1982).Google Scholar
6. Livingston, F. M., Messoloras, S., Newman, R. C., Pike, B. C., Stewart, R. J., Binns, M. J., Brown, W. P., and Wilkes, J. G., J. Phys. C 17, 6253 (1984).Google Scholar
7. Haas, C., J. Phys. Chem. Solids 15, 108 (1960).CrossRefGoogle Scholar
8. Corbett, J. W., McDonald, R. S. and Watkins, G. D., J. Phys. Chem. Solids 25, 873 (1964).Google Scholar
9. Takano, Y. and Maki, M., in Semiconductor Silicon, 1973, edited by Huff, H. R. and Burgess, R. R. (The Electrochem. Soc., Princeton, 1973) p. 469.Google Scholar
10. Newman, R. C., Tipping, A. K. and Tucker, J. H., J. Phys. C. 18, L861 (1985).Google Scholar
11. Oates, A. S., Newman, R. C. and Tucker, J. H., in Defects in Semiconductors, edited by Kimerling, L. C. and Parsey, J. M. Jr. (The Metallurgical Soc. of AIME, New York, 1985) p. 639.Google Scholar
12. Mikkelsen, J. C. Jr., J. Metals 37, 57 (1985).Google Scholar
13. Hahn, S. and Shatas, S., this volume.Google Scholar
14. Gaworzewski, P. and Shmalz, K., Phys. Stat. Sol. a55, 699 (1979).CrossRefGoogle Scholar
15. Oeder, R. and Wagner, P., in Defects in Semiconductors II, edited by Mahajan, S. and Corbett, J. W. (North Holland, New York, 1983) p. 14.Google Scholar
16. Pajot, B., Compain, H., Lerouille, J . and Clerjand, B., Physica 117B, 110 (1983).Google Scholar
17. Suezawa, M. and Sumino, K., Phys. Stat. Sol. a83, 235 (1984).CrossRefGoogle Scholar
18. Ourmazd, A., Schroter, W. and Bourret, A., J. Appl. Phys. 56, 1670 (1984).Google Scholar
19. Oeherlein, G. S. and Corbett, J. W., in reference 15, p. 153.Google Scholar
20. Newman, R. C., J. Phys. C 18, L967 (1985).CrossRefGoogle Scholar
21. Bergholz, W., Pirouz, P. and Hutchison, J. L., in reference 11, p. 717.Google Scholar
22. Inoue, N., Wada, K. and Osaka, J., in Semiconductor Silicon 1981, edited by Huff, H. R., Kriegler, R. J. and Takeishi, Y. (The Electrochem. Soc., Pennington, 1981) p. 282.Google Scholar
23. Wada, K., Phys. Rev. B30, 5884 (1984).Google Scholar
24. Frenkel, J., Phys. Rev. 54, 647 (1938).CrossRefGoogle Scholar
25. Benton, J. L., Lee, K. M., Freeland, P. E. and Kimerling, L. C., in reference 11, p. 647.Google Scholar
26. Lee, K. M., Watkins, G. D. and Trombetta, J., in Microscopic Identification of Electronic Defects in Semiconductors, edited by Johnson, N. M., Bishop, S. G. and Watkins, G. D. (Materials Research Soc., Pittsburgh, 1985) p. 263.Google Scholar
27. 5. Muller, H., Sprenger, M., Sieverts, E. G. and Ammolsoon, C. A. J., Solid State Comm. 25, 987 (1978).CrossRefGoogle Scholar
28. Stavola, M., Lee, K. M., Nabity, J. C., Freeland, P. E. and Kimerling, L. C., Phys. Rev. Lett. 54, 2639 (1985).Google Scholar
29. Stavola, M., Lee, K. M., Nabity, J. C., Freeland, P. E., and Kimerling, L. C., in reference 26, p. 257.Google Scholar
30. Stavola, M. and Lee, K. M., this volume.Google Scholar
31. Kimerling, L. C., Benton, J. L., Lee, K. M. and Stavola, M., in reference 26, p. 1.Google Scholar
32. Stavola, M. and Snyder, L. C., in Defects in Silicon, edited by Bullis, W. M. and Kimerling, L. C. (The Electrochem. Soc., Pennington, 1983) p. 61.Google Scholar
33. Snyder, L. C. and Corbett, J. W., in reference 11, p. 693.Google Scholar
34. Bourret, A., Thibault-Dessaux, J. and Seidman, D. N., J. Appl. Phys. 55, 825 (1984).CrossRefGoogle Scholar