Hostname: page-component-5c6d5d7d68-tdptf Total loading time: 0 Render date: 2024-08-06T13:15:52.016Z Has data issue: false hasContentIssue false

Structure and Properties of Silicon Carbide Implanted With Chromium

Published online by Cambridge University Press:  15 February 2011

C. J. Mchargue
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, Tennessee, USA
J. M. Williams
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, Tennessee, USA
Get access

Abstract

The effects of implanting chromium at fluences of up to 2.6 × 1016/cm2 on the structure and properties of single- and polycrystalline samples of SiC were studied. The material turned amorphous due to the implantation. The hardness decreased by as much as 25% and the fracture toughness increased by approximately 10% due to the implantation. The most interesting finding was that the material swells by as much as 30% upon implantation of some 2 × 1016 Cr-ions/cm2.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Science, U. S. Department of Energy under contract W–7405-eng–26 with the Union Carbide Corporation.

References

REFERENCES

1.Wright, R. B. and Gruen, D. M., Radiation Effects 33, 133 (1977).Google Scholar
2.Hart, R. R., Dunlap, H. T., and March, O. J., Ion Implantation in Semiconductors, Ruge, I., Graul, J. eds. (Springer-Verlag, Berlin 1971) pp. 134140.Google Scholar
3.Makarov, U. V., Tuomi, T., and Naukkarinen, K., Appl. Phys. Lett. 35, 922 (1979).Google Scholar
4.Hart, R. R., Dunlap, H. T., and Marsh, O. J., Radiation Effects 9, 261 (1971).Google Scholar
5.Campbell, A. B., Skewchun, J., Thompson, D. A., Davies, J. A., and Mitchell, J. B., Ion Implantation in Semiconductors, Namba, Susumu ed. (Plenum Press, New York 1975) pp. 291298.Google Scholar
6.Manning, J. and Iluellar, G. P., Comp. Phys. Comm. 7, 85 (1974).Google Scholar
7.Marion, R. H., Fracture Mechanics Applied to Brittle Materials, ASTM-STP 678, Freiman, S. W. ed. (American Society for Testing and Materials, Philadelphia 1979) pp. 103111.Google Scholar
8.Evans, A. G., ibid., pp. 112135.Google Scholar
9.Nelson, R. S., Ion Implantation, Amelinckx, S., Gevers, R., and Nihoul, J. eds. (North-Holland, Amsterdam 1973) pp. 154254.Google Scholar
10.Wittmaack, K. and Staudenmaier, G., J. Nucl. Mat. 93 & 94, 581 (1980).Google Scholar
11.Wittmaack, K., Blank, P., and Wach, W., Radiation Effects 39, 81 (1978).Google Scholar
12.Carey, A. M., Pineau, F. J., and Corelli, J. C., Second Topical Meeting on Fusion Reactor Materials (Seattle, Washington August 9–12, 1981) abstract 2D–9.Google Scholar