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Structural Relaxation of Vacancies in Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Eunja Kim ,
Young Hee Lee ,
Changfeng Chen  and
Tao Pang
Eunja Kim
Affiliation:
Department of Physics, University of Nevada, Las Vegas, Nevada 89154–4002, USA, kimej@physics.unlv.edu
Young Hee Lee
Affiliation:
Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561–756, R. O. Korea
Changfeng Chen
Affiliation:
Department of Physics, University of Nevada, Las Vegas, Nevada 89154–4002, USA, kimej@physics.unlv.edu
Tao Pang
Affiliation:
Department of Physics, University of Nevada, Las Vegas, Nevada 89154–4002, USA, kimej@physics.unlv.edu
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Abstract

We have studied the structural relaxation of vacancies in amorphous silicon (a-Si) using a tight-binding molecular-dynamics method. The most significant difference between vacancies in a-Si and those in crystalline silicon (c-Si) is that the deep gap states do not show up in a-Si. This difference is explained through the unusual behavior of the structural relaxation near the vacancies in a-Si, which enhances the sp2 + p bonding near the band edges. We have also observed that the vacancies do not migrate below 450 K although some of them can still be annihilated, particularly at high defect density due to large structural relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 555
Copyright
Copyright © Materials Research Society 1997

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References

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