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Structural Properties of InAs/AlSb Superlattices

Published online by Cambridge University Press:  15 February 2011

B. Jenichen ,
H. Neuroth ,
B. Brar  and
H. Kroemer
B. Jenichen
Affiliation:
Paul-Drude-Institut ffir Festkbrperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
H. Neuroth
Affiliation:
Paul-Drude-Institut ffir Festkbrperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
B. Brar
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
H. Kroemer
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
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Abstract

Short-period (InAs)6/(AlSb)6 superlattices (SL) with AlAs-like and InSb-like interfaces (IF) grown on a relaxed AlSb buffer layer are studied by X-ray reflectivity and diffractometry measurements. Reflectivity measurements reveal average IF roughnesses between 0.6 and 1.0 nm. Measurements of the diffuse scattering show that the roughness is highly correlated from layer to layer. Triple crystal area scans illustrate that the inhomogeneous deformation of the buffer layer leads to a certain symmetric peak broadening. In the case of AlAs-like IFs an additional broadening of the SL peaks reveals lattice parameter gradients over the superlattice. This asymmetric peak broadening may be attributed to a further relaxation of the superlattice, which is inhomogeneous with depth. The diffusion of As into the AlSb layers leads to a peak shift and modifies the intensity ratios of the different satellite reflections. The best structural quality is achieved for superlattices with InSb-like IFs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 493
Copyright
Copyright © Materials Research Society 1995

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