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Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE

Published online by Cambridge University Press:  03 September 2012

C. Giannini ,
E. Carlino ,
L. Tapfer ,
F. Höhnsdorf ,
J. Koch  and
W. Stolz
C. Giannini
Affiliation:
PASTIS-CNRSM, I-72100 Brindisi, Italy;
E. Carlino
Affiliation:
PASTIS-CNRSM, I-72100 Brindisi, Italy;
L. Tapfer
Affiliation:
PASTIS-CNRSM, I-72100 Brindisi, Italy;
F. Höhnsdorf
Affiliation:
Materials Science Center, Philipps-University, D-35032 Marburg, Germany
J. Koch
Affiliation:
Materials Science Center, Philipps-University, D-35032 Marburg, Germany
W. Stolz
Affiliation:
Materials Science Center, Philipps-University, D-35032 Marburg, Germany
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Abstract

In this work, we investigate the structural properties of (GaIn)(AsN)/GaAs multiplequantum wells (MQW) grown at low temperature by metalorganic vapour phase epitaxy. The structural properties, in particular the In- and N-incorporation, the lattice strain (strain modulation), the structural perfection of the metastable (GaIn)(AsN) material system and the structural quality of the (GaIn)(AsN)/GaAs interfaces are investigated by means of high-resolution x-ray diffraction, transmission electron microscopy (TEM), and secondary ion mass spectrometry. We demonstrate that (GaIn)(AsN) layers of high structural quality can be fabricated up to lattice mismatches of 4%. Our experiments reveal that N and In atoms are localized in the quaternary material and no evidences of In-segregation or N-interdiffusion could be found. TEM analyses reveal a low defect density in the highly strained layers, but no clustering or interface undulation could be detected. High-resolution TEM images show that (GaIn)(AsN)/GaAs interfaces are slightly rougher than GaAs/(GaIn)(AsN) ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.54
Copyright
Copyright © Materials Research Society 1999

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