Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-07-05T11:04:10.524Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Origin of Bulk Molecular Hydrogen in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Xiao Liu ,
R.O. Pohl  and
R.S. Crandall
Xiao Liu
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853, pohl@msc.comell.edu
R.O. Pohl
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
R.S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Get access

Abstract

The elastic anomaly observed previously at the triple point of bulk molecular hydrogen in hydrogenated amorphous silicon films prepared by hot-wire chemical-vapor deposition has also been observed in deuterated films at the triple point of D2. The origin of this anomaly has now been traced to bubbles formed at the crystalline-amorphous interface. An upper limit of the pressure in these bubbles at their formation temperature, 440°C, has been estimated to be 11 MPa, and is suggested to be a measure of the bonding strength between film and substrate at that temperature. Bubble formation after heat treatment at 400°C has also been observed in films prepared by plasma-enhanced chemical-vapor deposition. The internal friction anomalies resemble those observed previously in cold-worked hydrogenated iron where they have been interpreted through plastic deformation of solid hydrogen in voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 323
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Liu, Xiao, Iwaniczko, E., Pohl, R.O., Crandall, R.S., in Amorphous and Microcrystalline Silicon Technology—1998, edited by Schropp, R., Branz, H.M., Hack, M., Shimizu, I., and Wagner, S. (Mat. Res. Soc. Symp. Proc. 507, Pittsburgh, PA, 1998), pp. 595–600.Google Scholar
2. Mahan, A.H., Carapella, J., Nelson, B.P., Crandall, R.S., Balberg, I., J. Appl. Phys. 69, 6728 (1991).Google Scholar
3. Scott, R.B., Cryogenic Engineering, (Van Nostrand, Princeton, NJ, 1959), p. 291.Google Scholar
4. Liu, Xiao, White, B.E. Jr, Pohl, R.O., Iwaniczko, E., Jones, K.M., Mahan, A.H., Nelson, B.N., Crandall, R.S., Veprek, S., Phys. Rev. Lett. 78, 4418 (1997).Google Scholar
5. Manzhelii, V.G. and Freiman, Y.A., Physics of Cryocrystals, (American Institute of Physics, Woodbury, NY, 1997), p. 125.Google Scholar
6. White, B.E. and Pohl, R.O. in Thin Films: Stresses and Mechanical Properties V, edited by Baker, S.P., Ross, C. A., Townsend, P. H., Volkert, C. A., Borgesen, P. (Mat. Res. Soc. Sym. Proc. 356, Pittsburgh, PA, 1995), pp. 567–572.Google Scholar
7. Golter, A.E. and Roshchupkin, A.M., Soy. J. Low Temp. Phys. 8, 622 (1982); Thin Films: Stresses and Mechanical Properties., 13, 105 (1987).Google Scholar