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Structural Evolution of Top-Junction a-Si:C:H:B and Mixed-Phase (Microcrystalline Si)-(a-Sil-xCx:H) p-Layers in a-Si:H n-i-p Solar Cells

Published online by Cambridge University Press:  10 February 2011

Joohyun Koh ,
J. S. Burnham ,
Yeeheng Li ,
Hongyue Liu ,
Ing-Shin Chen ,
L. J. Pilione ,
C. R. Wronski  and
R. W. Collins
Joohyun Koh
Affiliation:
Materials Research Laboratory and Departments of The Pennsylvania State University, University Park, PA 16802.
J. S. Burnham
Affiliation:
Materials Research Laboratory and Departments of The Pennsylvania State University, University Park, PA 16802.
Yeeheng Li
Affiliation:
Electrical Engineering and The Pennsylvania State University, University Park, PA 16802.
Hongyue Liu
Affiliation:
Electrical Engineering and The Pennsylvania State University, University Park, PA 16802.
Ing-Shin Chen
Affiliation:
Materials Research Laboratory and Departments of The Pennsylvania State University, University Park, PA 16802.
L. J. Pilione
Affiliation:
Physics, The Pennsylvania State University, University Park, PA 16802.
C. R. Wronski
Affiliation:
Electrical Engineering and The Pennsylvania State University, University Park, PA 16802.
R. W. Collins
Affiliation:
Physics, The Pennsylvania State University, University Park, PA 16802.
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Abstract

We have applied real time spectroellipsometry (RTSE) to study hydrogenated amorphous silicon (a-Si:H) solar cells fabricated in the Cr/n-i-p configuration using plasma-enhanced chemical vapor deposition (PECVD) in a single-chamber system. The microstructural evolution of the n-, i-, and p-layers of the devices has been determined, including the thicknesses of the bulk, interface, and surface roughness layers versus time. The optical properties of the individual layers, including the dielectric functions and optical gaps, have also been obtained in the same analysis. In this study, we have focused on i/p interface formation and, in particular, on the nucleation process for differently-prepared a-Si:C:H and mixed-phase μc-Si:H/a-Si1-xCx:H p-layers on the a-Si:H i-layer. From the thickness dependence of the p-layer void volume fraction, we can obtain an estimate of the thickness at which nuclei make contact to form a continuous film. For the mixed-phase p-layers, the nuclei contact thickness can be reduced by exposing the i-layer to a H2-plasma prior to p-layer deposition. We have found that for similarly-prepared p-layers this reduction in contact thickness leads to an increase in open-circuit voltage of the solar cell

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 69
Copyright
Copyright © Materials Research Society 1996

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References

1. Luft, W. and Tsuo, Y., “Hydrogenated Amorphous Silicon Deposition Processes”;, (Marcel Dekker, New York, 1993).Google Scholar
2. Collins, R. W. in “Amorphous Silicon and Related Materials,” Vol. B, edited by Fritzsche, H., (World Scientific, Singapore, 1988) p. 1003.Google Scholar
3. Kitigawa, M., Mori, K., Ishihara, S., Ohno, M., Hirao, T., Yoshioka, Y., and Kohiki, S., J. Appl. Phys. 54, 3269 (1983).Google Scholar
4. Thomas, J. H. III and Catalano, A., Appl. Phys. Lett. 43, 101 (1983).Google Scholar
5. Kumar, S. and Drevillon, B., J. Appl. Phys. 65, 3023 (1989).Google Scholar
6. Lu, Y., An, I., Gunes, M., Wakagi, M., Wronski, C. R., and Collins, R. W., Mater. Res. Soc. Symp. Proc. 297, 31 (1993).Google Scholar
7. An, I., Lu, Y., Wronski, C. R., and Collins, R. W., Appl. Phys. Lett. 64, 3317 (1994).Google Scholar
8. Imura, T., Kaya, H., Terauchi, H., Kiyono, H., Hiraki, A., and Ichihara, M., Jpn. J. Appl. Phys. 23, 179 (1984).Google Scholar
9. Guha, S., Yang, J., Nath, P., and Hack, M., Appl. Phys. Lett. 49, 218 (1986).Google Scholar
10. Boland, J.J. and Parsons, G.N., Science 256, 1304 (1992).Google Scholar
11. Nguyen, H.V., An, I., Collins, R.W., Lu, Y., Wakagi, M., and Wronski, C.R., Appl. Phys. Lett. 65, 3335 (1994).Google Scholar
12. Yang, Y.H., Katiyar, M., Abelson, J.R., and Maley, N., Mater. Res. Soc. Symp. Proc. 297, 25 (1993).Google Scholar
13. Koh, J., Lu, Y., Kim, S., Burnham, J.S., Wronski, C.R., and Collins, R.W., Appl. Phys. Lett. 67, 2669 (1995).Google Scholar