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Structural Defects related issues of GaN-based Laser Diodes

Published online by Cambridge University Press:  01 February 2011

Shigetaka Tomiya ,
Motonobu Takeya ,
Shu Goto  and
Masao Ikeda
Shigetaka Tomiya
Affiliation:
Material Analysis Dept. Sony EMCS Corporation, Atsugi, Kanagawa, 243–0021, Japan
Motonobu Takeya
Affiliation:
Shiroishi Laser Center, MSNC DSC Semiconductor Laser Div., Sony Corporation Shiroishi, Miyagi, 989–0734, Japan
Shu Goto
Affiliation:
Shiroishi Laser Center, MSNC DSC Semiconductor Laser Div., Sony Corporation Shiroishi, Miyagi, 989–0734, Japan
Masao Ikeda
Affiliation:
Shiroishi Laser Center, MSNC DSC Semiconductor Laser Div., Sony Corporation Shiroishi, Miyagi, 989–0734, Japan
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Abstract

Structural defects affecting the lifetime of GaN-based laser diodes (LDs) on epitaxial lateral overgrown (ELO) GaN layers have been investigated. Almost all of the threading dislocations that appeared in the wing regions have edge character, whereas the dislocations at the coalescence boundaries have both edge character and mixed character. The origins of the threading dislocations in the wing regions are the lateral extension of dislocations from the seed regions that contingently bend upwards to the epi-surface. Thus, edge dislocations are most considerable threading dislocations in GaN-based LDs on ELO GaN layers, since the laser stripes are fabricated in the wing regions. In the degraded LDs, neither dislocation multiplication from the threading dislocations nor any structural changes of the threading dislocations were observed. This indicates that degradation is not caused by dislocation multiplication at the active layers, which is usually observed in LDs featuring zincblende-based structures. Although the threading dislocations in the LD stripes do not multiply during device operation, our degradation experiments revealed that the lifetime of the GaN-based LDs depends on the dislocation density. The degradation rate was almost proportional to the square root of the aging time. Our results indicate that degradation is governed by a diffusion process, and a detailed degradation mechanism is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E1.1
Copyright
Copyright © Materials Research Society 2005

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References

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