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Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment

Published online by Cambridge University Press:  09 August 2011

G. F. Grom
Affiliation:
Materials Science Program, Department of Mechanical Engineering
L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering University of Rochester, Rochester, NY 14627
K. D. Hirschman
Affiliation:
Department of Electrical and Computer Engineering University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering University of Rochester, Rochester, NY 14627
J. P. McCaffrey
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa KIA OR6, Canada
H. J. Labbé
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa KIA OR6, Canada
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa KIA OR6, Canada
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Abstract

The morphology of nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) is studied using Raman spectroscopy in the acoustic and optical phonon ranges, transmission electron microscopy (TEM), and atomic force microscopy (AFM). It is demonstrated that high temperature annealing (up to 1100°C) and oxidation in O2/H2O ambient do not destroy the SL structure, which retains its original periodicity and nc-Si/a-SiO2 interface abruptness. It is found that oxidation at high temperatures reduces the defect density in nc-Si/a-SiO2 SLs and induces the lateral coalescence of Si nanocrystals (NCs). The size, shape, packing density, and crystallographic orientation of the Si nanocrystals are studied as a function of the oxidation time.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Haricot, T. in Mesoscopic Physics and Electronics, edited by Ando, T., Arakawa, Y., Furuya, K., Komiyama, S. and Nakashima, H., (Springer-Verlag, 1998), p.213219 Google Scholar
2. Guo, L., Leobandung, E., Chou, S. Y., Science 275, 649651 (1997); Y. Ishikawa, N. Shibata, S. Fukatsu, Appl. Phys. Lett. 72, 2592-2594 (1998); Y. Kanemitsu, S. Okamoto, Phys. Rev B 56, R15561-R15564 (1997)Google Scholar
3. Grtitzmacher, D. A., Steigmeier, E. F., Auderset, H., Morf, M., Delley, B and Wessicken, R. in Microcrystalline and Nanocrystalline Semiconductors, edited by Collins, R. W., Tsai, C C., Hirose, M., Koch, F., Brus, L. (Mater. Res. Soc. Proc. 358, Pittsburgh, PA, 1995) pp. 833838; X. Huang, W. Shi, K. Chen, S. Yu, and D. Feng, pp. 839-844Google Scholar
4. Tsybeskov, L., Hirschman, K. D., Duttagupta, S. P., Zacharias, M., Fauchet, P. M., McCaffrey, J. P. and Lockwood, D. J., Appl. Phys. Lett. 72, 4345 (1998)Google Scholar
5. Fauchet, P. M., Tsybeskov, L., Zacharias, M. and Hirschman, K. D. in Thin-Films Structures for Photovoltaics, edited by Jones, E. D., Kalejs, J., Noufi, R. and Sopori, B. (Mater. Res. Soc. Proc. 485, Warrendale, PA, 1998) pp. 4959 Google Scholar
6. Zacharias, M., Tsybeskov, L., Hirschman, K. D., Fauchet, P. M., Bldising, J., Kohlert, P., Veit, P. J. of Non-Crys. Solids, 227–230, 11321136 (1998)Google Scholar
7. Campbell, I. H. and Fauchet, P. M., Solid State Commun., 58, 739 (1986)Google Scholar
8. Jusserand, B. and Cardona, M., in Light Scattering in Solids V, edited by Cardona, M. and Guintherodt, G. (Springer, Berlin, 1989), p. 49.Google Scholar
9. Lockwood, D. J., Dharma-wardana, M. W. C., Baribeau, J. -M., and Houghton, D. C., Phys. Rev. B 35, 22432251 (1986)Google Scholar
10. Colvard, C., Gant, T. A., Klein, M. V., Merlin, R., Fischer, R., Morkoc, H., A. C. Gossard, Phys. Rev. B 31, 20802091 (1985)Google Scholar
11. Grom, G., Tsybeskov, L., Hirschman, K. D., Fauchet, P. M., McCaffrey, J. P., Baribeau, J.- M., Labbé, H. J. and Lockwood, D. J., to be publishedGoogle Scholar