Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T10:46:01.367Z Has data issue: false hasContentIssue false

Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy

Published online by Cambridge University Press:  15 March 2011

Tihomir Gugov
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
Mark Wistey
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
Homan Yuen
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
Seth Bank
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
James S. Harris Jr.
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
Get access

Abstract

In the past decade, the quaternary GaInNAs alloy has emerged as a very promising material for lasers in the 1.2-1.6 μm range with application in telecommunication fiber-optic networks. While most of the challenges in growing high quality laser material with emission wavelength out to 1.3 μm have been successfully resolved, extending the emission beyond 1.3 μm has proven to be quite difficult. Achieving emission out to 1.5 μm requires higher In (up to 40%) and N (up to 2%) compositions. This makes the growth of this thermodynamically unstable alloy quite difficult with phase segregation occurring even at lower growth temperatures. Recently, adding small amounts of antimony has dramatically improved the quality of the material and high luminescence has been demonstrated at wavelengths beyond 1.5 μm. In this study, high-resolution transmission electron microscopy (HRTEM) was used in a novel way in conjunction with dark-field (DF) TEM to elucidate the role of antimony in improving the material quality. The results show that antimony improves the material uniformity via reduction of the local compositional fluctuations of indium.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sato, S., Osawa, Y., Saitoh, T. and Fujimura, I., Electron. Lett. 33, 1386 (1997).Google Scholar
2. Harris, J.S., IEEE J. Sel. Top. Quantum Electron. 6, 1145 (2000).Google Scholar
3. Wagner, A., Ellmers, C., Höhnsdorf, F., Koch, J., Agert, C., Leu, S., Hofmann, M., Stolz, W. and Rühle, W.W., Appl. Phys. Lett. 76, 271 (2000).Google Scholar
4. Ramakrishnan, A., Steinle, G., Supper, D., C. Degen and G. Ebbinghaus, Electron. Lett. 38, 322 (2002).Google Scholar
5. Volz, K., Schaper, A.K., Hasse, A., Weirich, T., Höhnsdorf, F., Koch, J. and Stolz, W., Mater. Res. Soc. Symp. Proc. 619, 291 (2000).Google Scholar
6. Bank, S., Ha, W., Gambin, V., Wistey, M., Yuen, H., Goddard, L., Kim, S. and Harris, J.S., J. Crystal Growth 251, 367 (2003).Google Scholar
7. Bank, S., Wistey, M., Ha, W., Yuen, H., Goddard, L., and Harris, J. S., Electron. Lett. 39, 1445 (2003).Google Scholar
8. Harris, J.S. Jr., Semicond. Sci. Technol. 17, 880 (2002).Google Scholar
9. Albrecht, M., Grillo, V., Remmele, T., Strunk, H., Egorov, A., Dumitras, Gh., Riechert, H., Kaschner, A., Heitz, R. and Hoffmann, A., Appl. Phys. Lett. 81, 2719 (2002).Google Scholar
10. Chauveau, J.-M., Trampert, A., Pinault, M.-A., Tournie, E., Du, K. and Ploog, K., J. Crystal Growth 251, 383 (2003).Google Scholar