Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T10:54:14.991Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Optical Properties of Highly Efficient 2- μm Thick CdS/CdTe Thin Film Solar Cells

Published online by Cambridge University Press:  21 March 2011

K. Nakamura ,
M. Gotoh ,
T. Fujihara ,
T. Toyama  and
H. Okamoto
K. Nakamura
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, −Osaka University Toyonaka, Osaka, 560-8531, Japan
M. Gotoh
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, −Osaka University Toyonaka, Osaka, 560-8531, Japan
T. Fujihara
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, −Osaka University Toyonaka, Osaka, 560-8531, Japan
T. Toyama
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, −Osaka University Toyonaka, Osaka, 560-8531, Japan
H. Okamoto
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, −Osaka University Toyonaka, Osaka, 560-8531, Japan
Get access

Abstract

The structural and optical properties of CdS/CdTe(S) interface region of 2-μm thick CdS/CdTe solar cells have been studied in conjunction with photovoltaic performances of the solar cells. The properties are found to be crucially influenced by the annealing temperature and oxygen concentration of the CdCl2 treatment. An increase in VOC and F.F. found in the solar cells with the CdCl2 treatment at < 360°C is interpreted as due to suppression of interdiffusion of sulfur and tellurium at the CdS/CdTe(S) interface. On the other hand, the electromodulated photoluminescence with UV light excitation (UVE-EMPL) study reveals that the increasing VOC due to increasing oxygen concentration to 5% is likely to be caused by an increase in the built-in electric field in n+-CdTe1−xSx just adjacent to the CdS/CdTe(S) interface. As a result of the modification of the process parameters, we have achieved the conversion efficiency of 13.6% (VOC: 0.817V, JSC: 23.0 mA/cm2, F.F.: 0.725) using 2.3-μm thick PV active layer without anti-reflection coating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H6.3
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chu, T. L., in “Current Topics in Photovoltaics,” edited by Coutts, T. J. and Meakin, J. D. (Academic Press, New York, 1988) Vol. 3, Chap. 3, pp. 236–281.Google Scholar
2. Adachi, S., “Optical Constants of Crystalline and Amorphous Semiconductors, Numerical Data and Graphical Information,” (Kluwer Academic Publishers, Boston, 1999) pp. 530–545.Google Scholar
3. Nakamura, K., Gotoh, M., Fujihara, T., Toyama, T. and Okamoto, H., presented at 28th IEEE PVSC, Anchorage, Alaska, 2000.Google Scholar
4. Toyama, T., Suzuki, T., Gotoh, M., Nakamura, K. and Okamoto, H., Sol. Energy Mater & Sol. Cells 67, 41 (2001).Google Scholar
5. Nakamura, K., Gotoh, M., Fujihara, T., Toyama, T. and Okamoto, H., to appear in Jpn. J. Appl. Phys. Google Scholar
6. Ohata, K., Saraie, J. and Tanaka, T.: Jpn. J. Appl. Phys. 12 1641 (1973).Google Scholar
7. Okamoto, T., Matsuzaki, Y., Amin, N., Yamada, A. and Konagai, M., Jpn. J. Appl. Phys. 37, 3894, (1998).Google Scholar
8. Tang, C. W. and Vazan, F., J. Appl. Phys. 55, 3886 (1984).Google Scholar