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Structural and Electronic Studies of C60 Films Deposited Using a New Technique of Neutral Cluster Beam Deposition

Published online by Cambridge University Press:  22 February 2011

Zhong-Min Ren
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R.China
Zhi-Feng Ying
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R.China
Xia-Xing Xiong
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R.China
Mao-Qi He
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R.China
Yuan-Cheng Du
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R.China
Yu-Fen Li
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R.China
Fu-Ming Li
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R.China
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Abstract

C50 films, are deposited on Si(111) substrates using neutral cluster beams of fullerenes generated from a crucible with a special nozzle. X-ray diffraction (XRD) have been used to investigate the structural properties of C50 films, which indicate highly textural films as close-packed structure with strong (110) XRD assignment and 400Å for correlation length. Raman spectrum indicates the existence of stable C60 films. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) measurements are carried out to analyze the electronic properties of the films. The resistivity to contamination of C50 film deposited here is better than that deposited by MBE. Different kinds of oxygen contamination on the surfaces of C50 films and HDPG are detected by the results of O 1s XPS analyses.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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