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Structural and Electrical Properties of Thermally Annealed InN Thin Films on Native and Ain-Nucleated (00.1) Sapphire

Published online by Cambridge University Press:  15 February 2011

T. J. Kistenmacher ,
S. A. Ecelberger ,
W. A. Bryden  and
M. E. Hawley
T. J. Kistenmacher
Affiliation:
Milton S. Eisenhower Research Center, Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20723
S. A. Ecelberger
Affiliation:
Milton S. Eisenhower Research Center, Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20723
W. A. Bryden
Affiliation:
Milton S. Eisenhower Research Center, Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20723
M. E. Hawley
Affiliation:
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

The effects of thermal annealing at 400°C in 5 MTorr of N2 on the structural and electrical properties of thin films of InN grown at 100°C on native and AIN-nucleated (00.1) sapphire by reactive magnetron sputtering have been studied. The variations in the properties of the two sets of films have qualitatively similar, yet quantitatively different dependencies on anneal time. In each case, surface decomposition to give (101) textured rods of elemental indium is seen at short anneal times, and markedly so in the more highly strained films on the AIN-nucleated substrates. The electrical properties in both cases improve with annealing time, yielding a Hall Mobility that is enhanced 2–3 times relative to as-deposited films and similar to that for films grown at a substrate temperature of 400°C. The evolution of the electrical properties appears to be relatively insensitive to the surface decomposition and to largely reflect the nature of the bulk InN Matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 461
Copyright
Copyright © Materials Research Society 1994

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References

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