Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-16T07:29:16.348Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of Heavily-Doped Rapid-thermal-Processed Polysilicon Emitters and Contacts on Silicon

Published online by Cambridge University Press:  22 February 2011

Bruha Raicu ,
L. A. Christel ,
K.-G. Huang ,
Shin Hashimoto ,
W. M. Gibson  and
I. Ward
Bruha Raicu
Affiliation:
Integrated Technologies Associates, 1033 Crestview #307, Mountain View, CA 94040 (now at Monolithic Memories, Inc.)
L. A. Christel
Affiliation:
SERA Solar Corporation, 3151 Jay Street, Santa Clara, CA 95054
K.-G. Huang
Affiliation:
Physics Department, State University of New York, 1400 Washington Ave., Albany, NY 12222
Shin Hashimoto
Affiliation:
Physics Department, State University of New York, 1400 Washington Ave., Albany, NY 12222
W. M. Gibson
Affiliation:
Physics Department, State University of New York, 1400 Washington Ave., Albany, NY 12222
I. Ward
Affiliation:
Charles Evans & Associates, 301 Chesapeake Dr., Redwood City, CA 94036
Get access

Abstract

Supersaturated high-conductivity polycrystalline silicon (polysilicon) formed by rapid thermal processing (RTP) is a promising new material for emitters, contacts and diffusion sources in advanced high-speed bipolar and MOS IC technologies.

A matrix of processing conditions was used to evaluate the effect of polysilicon thickness, implant dose, RTP conditions and the nature of the substrate on the dopant diffusion in both the polysilicon and single crystal substrate and also on the interface properties.

Results of conductivity measurements, spreading resistance profiling (SRP), secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS)/channeling are presented. The results have proved the formation of shallow, defect-free junctions and epitaxial emitters with low series resistance and improved contact properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 267
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Raicu, B., ASTM Symposium on Semiconductor Processing – San Jose, California, Feb. 7–10, 1984. U.S. Patent #4,561,907, Dec 31, 1985 Google Scholar
[2] Raicu, B., Electrophysics 11, ed. Ryssel, H. and Glavishnic, H., pp450–457, Springer- Verlag, 1983 (proc. of 4th Int. Conf. on Ion Implantation Technology, Berchestgaden, Germany 1982).Google Scholar
[3] Christel, L.A., Sandia Contractor Report SAND86-7051, Albuquerque, NM (1985).Google Scholar
[4] Schaber, H., Bieger, J., Meister, T.F., Ehinger, K. and Kakoschke, R., IEDMWashington, DC, December 6–9, 1987 p. 170–173.Google Scholar