Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-11T11:25:45.530Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs

Published online by Cambridge University Press:  21 February 2011

L. H. Chang ,
Q. X. Jia  and
W. A. Anderson
L. H. Chang
Affiliation:
State University of New York at Buffalo, Center of Electronic and Electro-Optic Materials, Department of Electrical and Computer Engineering, Bonner Hall,Amherst,NY 14260
Q. X. Jia
Affiliation:
State University of New York at Buffalo, Center of Electronic and Electro-Optic Materials, Department of Electrical and Computer Engineering, Bonner Hall,Amherst,NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center of Electronic and Electro-Optic Materials, Department of Electrical and Computer Engineering, Bonner Hall,Amherst,NY 14260
Get access

Abstract

RF magnetron sputtering of BaTiO3 on (100) p-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTi03 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystal-line, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV−1 cm−2. The relative dielectric constant of the composite structure was controlled in a range from 30 to 130. The leakage current density was as low as 8×10−10 A/cm2 at a field intensity of (2±0.5)×105 V/cm. Breakdown voltage varied from 5x105 to 2×106 V/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 501
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Park, L. H. and Tasch, A. F., IEEE Circuits and Devices Mag. p17, Jan. (1990)Google Scholar
2 Sreenivas, K., Mansingh, A., and Sayer, M., J. Appl. Phys. 62,4475 (1987)Google Scholar
3 Kamalasanan, M. N., Chandra, S., Joshi, P. C., and Mansingh, A., Appl. Phys. Lett. 59,3547 (1991)CrossRefGoogle Scholar
4 Jia, Q. X., Shi, Z. Q., and Anderson, W. A., Thin Solid Films 209,230 (1992)Google Scholar
5 Rose, T. L., Kelliher, E. M., Scoville, A. N., and Stone, S. E., J. Appl. Phys. 55,3706 (1984)Google Scholar
6 Pratt, I. H. and Firestone, S., J. Vac. Sci. Technol. 8,256 (1971)Google Scholar
7 Shintani, Y. and Tada, O., J. Appl. Phys. 41,2376 (1970)Google Scholar
8 Dharmadhikari, V. S. and Grannemann, W. W., J. Appl. Phys. 53,8988 (1982)Google Scholar
9 Li, P. and Lu, T. M., Appl. Phys. Lett. 57,2336 (1990)Google Scholar
10 Dharmadhikari, V. S. and Grannemann, W. W., J. Vac. Sci. Techol. A1,483 (1983)Google Scholar
11 Mitsui, T. and Nomura, S., Landbolt-Bemstein, Numerical Data and Functional Relationships in Science and Technology, Crystal and Solid State Physics (Springer, Berlin, 1981), Vol. 16AGoogle Scholar
12 Li, P. and Lu, T. M., Phys. Rev. B43, 14261 (1991)Google Scholar
13 Castagne, R. and Vaparille, A., Surface Sci. 28, 157 (1971)Google Scholar