Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-29T11:03:08.153Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

Published online by Cambridge University Press:  15 February 2011

W.F. Mcarthur ,
K.M. Ring  and
K.L. Kavanagh
W.F. Mcarthur
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
K.M. Ring
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
K.L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
Get access

Abstract

The feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 327
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 S-Q, Wang in Advanced Metallization for ULSI Applications in 1993, Favreau, D.P., Shacham-Diamond, Y., Honike, Y., eds. (Mater. Res. Soc. Proc., October 5-7, 1993 San Diego, CA, USA, October 26-27, 1993, Tokyo Japan) pp. 31-48.Google Scholar
2 Kolawa, E., Pokela, P.J., Reid, J.S., Reid, J.S., Chen, J.S., Ruiz, R.P., and Nicolet, M.A., IEEE Elect. Dev. Lett., 12, 321 (1991).Google Scholar
3 Halloway, K. and Fryer, P.M., Appl. Phys. Lett., 57, 1736, (1990).Google Scholar
4 Kolawa, E., Chen, J.S., Reid, J.S., Pokela, P.J., and Nicolet, M.-A., J. Appl. Phys., 70, 1369, (1991).Google Scholar
5 Sasaki, K., Noya, A., and Umozawa, T., Jap J. Appl. Phys., 20, 1043, (1990).Google Scholar
6 Kolawa, E., Molarius, J.M., Nieh, C.W., and Nicolet, M.-A., J. Vac. Sci. Technol. A8, 3006, (1990).Google Scholar