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Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

Published online by Cambridge University Press:  15 February 2011

W.F. Mcarthur
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
K.M. Ring
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
K.L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
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Abstract

The feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1 S-Q, Wang in Advanced Metallization for ULSI Applications in 1993, Favreau, D.P., Shacham-Diamond, Y., Honike, Y., eds. (Mater. Res. Soc. Proc., October 5-7, 1993 San Diego, CA, USA, October 26-27, 1993, Tokyo Japan) pp. 31-48.Google Scholar
2 Kolawa, E., Pokela, P.J., Reid, J.S., Reid, J.S., Chen, J.S., Ruiz, R.P., and Nicolet, M.A., IEEE Elect. Dev. Lett., 12, 321 (1991).Google Scholar
3 Halloway, K. and Fryer, P.M., Appl. Phys. Lett., 57, 1736, (1990).Google Scholar
4 Kolawa, E., Chen, J.S., Reid, J.S., Pokela, P.J., and Nicolet, M.-A., J. Appl. Phys., 70, 1369, (1991).Google Scholar
5 Sasaki, K., Noya, A., and Umozawa, T., Jap J. Appl. Phys., 20, 1043, (1990).Google Scholar
6 Kolawa, E., Molarius, J.M., Nieh, C.W., and Nicolet, M.-A., J. Vac. Sci. Technol. A8, 3006, (1990).Google Scholar