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The Structural and Electrical Characterization of Copper Decorated Boundaries in Silicon Bicrystals*

Published online by Cambridge University Press:  26 February 2011

F.S. Miller ,
H.S. Betrabet  and
W.A.T. Clark
F.S. Miller
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
H.S. Betrabet
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
W.A.T. Clark
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
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Abstract

Silicon bicrystals have been fabricated by sintering together single crystal {001} and {111} wafers with low angle misorientations In the range of 0.5 to 3.0 degrees. The interfaces in these bicrystals contain regular arrays of screw dislocations with observed spacings of 10 to 40 nm. The dislocations were decorated with copper which was first sputter-deposited on an external surface, then diffused into the interface by annealing the bicrystal at 400°C for 15 minutes. Analytical electron microscopy was used to characterize the spacing, orientation, and copper concentration of these dislocation arrays. The electrical properties of both decorated and undecorated bicrystals were determined using a two-probe step I-V method, and the behavior of both types of bicrystals compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 259
Copyright
Copyright © Materials Research Society 1987

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Footnotes

**

Present Address: IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.

*

Research supported by The Ohio State University Office of Research and Uaduate Studies.

References

REFERENCES

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