Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-19T06:47:39.363Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Analysis of Silicon Doped by Plasma Source Ion Implantation

Published online by Cambridge University Press:  22 February 2011

R.J. Matyi ,
D.L. Chapek ,
J.R. Conrad  and
S.B. Felch
R.J. Matyi
Affiliation:
Dept. of Materials Science and Engineering
D.L. Chapek
Affiliation:
Dept. of Nuclear Engineering and Engineering Physics, University of Wisconsin, Madison, WI 53706
J.R. Conrad
Affiliation:
Dept. of Nuclear Engineering and Engineering Physics, University of Wisconsin, Madison, WI 53706
S.B. Felch
Affiliation:
Ginzton Research Center, Varian Associates, Inc., Palo Alto, CA 94304
Get access

Abstract

We have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1017
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Qian, X.Y., Cheung, N.W., Lieberman, M.A., Felch, S.B., Brennan, R. and Current, M.I., Appl. Phys. Lett., 59, 348 (1991).Google Scholar
2 Pico, C.A., Solid State Tech., 35, 81 (1992).Google Scholar
3 Felch, S.B., Sheng, T. and Cooper, C.B. III, Proc. 9th International Conference on Ion Implantation Technology, eds. Downey, D.F., Farley, M., Jones, R.S . and Ryding, G. (North-Holland Elsevier, Amsterdam), 687 (1993).Google Scholar
4 Conrad, J.R., Radtke, J.L., Dodd, R.A., Worzala, F.J. and Tran, N.C., J. Appl. Phys., 62, 4591 (1987).Google Scholar
5 Speriosu, V.S., J. Appl. Phys., 52, 6094 (1981).Google Scholar
6 Speriosu, V.S., Paine, B.M., Nicolet, M-A. and Glass, H.L., Appl. Phys. Lett., 40, 604 (1982).Google Scholar
7 Cembali, F., Servidori, M., Gabilli, E. and Lotti, R., Phys. Stat. Sol. A., 87, 225 (1985).Google Scholar
8 Zaumseil, P. and Winter, U., Phys. Stat. Sol. A., 120, 67 (1990).Google Scholar
9 See, for instance, Pick, M.A., Bickmann, K., Pofahl, E., Zwoll, K. and Wenzl, H., J. Appl. Cryst., 10, 450 (1977); P. Zaumseil and U. Winter, Phys. Stat. Sol. A, 73, 455 (1982); A.A. Lomov, P. Zaumseil and U. Winter, Acta. Cryst. A, 41, 223 (1985).Google Scholar
10 Matyi, R.J., Rev. Sci. Instrwn., 63, 5591 (1992).Google Scholar
11 Fewster, P.F., J. Appl. Cryst., 22, 64 (1989); P.F. Fewster, ibid., 24, 178 (1991).Google Scholar
12 Iida, A. and Kohra, K., Phys. Stat. Sol., A51, 533 (1979).Google Scholar
13 Andrews, S.R. and Cowley, R.A., J. Phys. C, 18, 6427 (1985).Google Scholar
14 Wang, V.S. and Matyi, R.J., J. Appl. Phys., 72, 5158 (1992).Google Scholar
15 Wang, V.S. and Matyi, R.J., J. Appl. Phys., in press.Google Scholar
16 RADS version 1.32, available from Bede Scientific, Durham, UK.Google Scholar