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Structural Analyses of Fluorine-Doped Silicon Dioxide Dielectric Thin Films by Micro-Raman Spectroscopy

Published online by Cambridge University Press:  17 March 2011

Jeffery L. Coffer ,
T. Waldek Zerda ,
Kelly J. Taylor  and
Scott Martin
Jeffery L. Coffer
Affiliation:
Department of Chemistry Texas Christian University, Ft. Worth, Texas 76129
T. Waldek Zerda
Affiliation:
Department of Physics Texas Christian University, Ft. Worth, Texas 76129
Kelly J. Taylor
Affiliation:
Texas Instruments, Kilby Center, Dallas, Texas 75243
Scott Martin
Affiliation:
Texas Instruments, Kilby Center, Dallas, Texas 75243
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Abstract

Fluorine-doped silicon dioxide, a dielectric material compatible with copper integration, has received considerable attention for applications requiring a k value in the 3.5 to 4.0 range. Given the influence of structure on desired properties, convenient experimental structural probes of this type of material are of widespread interest. This work focuses on Raman spectroscopic analyses of ring defects in fluorine-doped silicon dioxide films prepared by plasma enhanced chemical vapor deposition (PECVD) as well as high density plasma methods (HDP). These measurements are complemented by ab initio computational simulations of the ring defects in these films and the impact of nearby fluorine on their stability. The impact of aging on these structures and correlations of observed trends with experimental techniques such as X-ray fluorescence are also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.10.1
Copyright
Copyright © Materials Research Society 2000

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References

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