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Strong Deviation Of The Lattice Parameter In Si1-x-yGexCy Epilayers From Vegard's Rule

Published online by Cambridge University Press:  10 February 2011

J. Stangl ,
S. Zerlauth ,
F. Schäffler ,
G. Bauer ,
M. Berti ,
D. De Salvador ,
A. V. Drigo  and
F. Romanato
J. Stangl
Affiliation:
Inst. for Semiconductor Physics, Kepler-University Linz, Altenbersgerstr. 69, A-4040 Linz, Austria
S. Zerlauth
Affiliation:
Inst. for Semiconductor Physics, Kepler-University Linz, Altenbersgerstr. 69, A-4040 Linz, Austria
F. Schäffler
Affiliation:
Inst. for Semiconductor Physics, Kepler-University Linz, Altenbersgerstr. 69, A-4040 Linz, Austria
G. Bauer
Affiliation:
Inst. for Semiconductor Physics, Kepler-University Linz, Altenbersgerstr. 69, A-4040 Linz, Austria
M. Berti
Affiliation:
INFM at the Physics Dept. University of Padova, Via Marzolo 8, I-35131 Padova, Italy
D. De Salvador
Affiliation:
INFM at the Physics Dept. University of Padova, Via Marzolo 8, I-35131 Padova, Italy
A. V. Drigo
Affiliation:
INFM at the Physics Dept. University of Padova, Via Marzolo 8, I-35131 Padova, Italy
F. Romanato
Affiliation:
INFM at the Physics Dept. University of Padova, Via Marzolo 8, I-35131 Padova, Italy
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Abstract

From the comparison of precise determinations of the Ge and C contents of a series of Si1-x-yGexCy epilayer samples (x < 0.18, y < 0.02) by Rutherford and resonant backscattering experiments and x-ray diffraction, the variation of the Si1-x-yGexCy lattice spacing as a function of C content is determined. A significant negative deviation from Vegard's rule is observed, in agreement with theoretical predictions by Kelires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 257
Copyright
Copyright © Materials Research Society 1998

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