Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T20:39:56.772Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress-Temperature Behavior of O3-TEOS Sub-Atmospheric CVD (SACVD) Oxide Films Deposited on Various Oxide Underlayers

Published online by Cambridge University Press:  15 February 2011

Stuardo A. Robles ,
Ellie Yieh ,
Maria Galiano ,
Kurt kwok  and
Bang C. Nguyen
Stuardo A. Robles
Affiliation:
Applied Materials Inc., Santa Clara, CA 95054
Ellie Yieh
Affiliation:
Applied Materials Inc., Santa Clara, CA 95054
Maria Galiano
Affiliation:
Applied Materials Inc., Santa Clara, CA 95054
Kurt kwok
Affiliation:
Applied Materials Inc., Santa Clara, CA 95054
Bang C. Nguyen
Affiliation:
Applied Materials Inc., Santa Clara, CA 95054
Get access

Abstract

A systematic evaluation of the stress-temperature behavior of O3-TEOS Sub-Atmospheric CVD (SACVD) oxide films used in IMD applications was performed in order to elucidate the surface dependence and mechanical stability of these films when deposited on different oxide underlayers such as PECVD TEOS-based, Silane-based, and thermally grown oxides. SACVD films were deposited at 360°C using different O3:TEOS molar flow ratios. The results obtained in this study indicate that the stress-temperature behavior of SACVD films deposited on PECVD Silane-based and TEOS-based oxides using N2O as the oxidizing agent is similar to that of the SACVD films deposited on silicon. However, a large stress hysteresis is obtained when SACVD films are deposited on PECVD TEOS-O2 and thermally grown oxide underlayers. This large stress hysteresis results from the surface dependence effects of the SACVD oxides on thermally grown and PECVD TEOS-O2 oxide underlayers. Also, this stress hysteresis can be reduced or eliminated by treating the oxide underlayer surface with an in-situ Ar, He, or N2 plasma. Furthermore, it was also found that the SACVD oxides deposited using higher O3:TEOS molar flow ratios are chemically and mechanically more stable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 77
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kishimoto, K., Susuki, M., Hirayama, T., Ikeada, Y., and Numasawa, Y., Proc. 9th Int. VMIC Conference, 149 (1992).Google Scholar
2 Fujino, K., Nishimoto, Y., Tokumasu, N. and Maeda, K., Proc 7th Int. VMIC Conference, 187 (1990).Google Scholar
3 Fujino, K., Nishimoto, Y., Tokumasu, N. and Maeda, K., J. Electrochem. Soc., 138, 550 (1991).CrossRefGoogle Scholar
4 Matsuura, M., Kotani, H. and Abe, H., Extended Abstract of the 22nd Conference on Solid State Devices and Materials, 239 (1990).Google Scholar
5 Robles, S., Galiano, M. and Nguyen, B.C., Electrochem. Soc. Extended Abstract, 92–1, 215 (1992).Google Scholar
6 Galiano, M., Yieh, E., Robles, S., and Nguyen, B.C., Proc. 9th Int. VMIC Conference, 100 (1992)Google Scholar
7 Harms, A.S., van Schravendijk, B., Park, J. and van de Ven, E., Electrochem. Soc. Extended Abstracts, 92–1, 332, (1991).Google Scholar
8 Maeda, K., VLSI Report, #31 VLSI Forum, (1993)Google Scholar
9 Blech, I. and Cohen, U., J. Appl. Phys. 53, 4202 (1982).Google Scholar
10 Kwok, K., Yieh, E., Robles, S., and Nguyen, B.C., Electrochem. Soc. Extended Abstract, 92–1, 1256 (1993).Google Scholar
11 Fujino, K., Nishimoto, Y., Tokumasu, N., and Maeda, K., J. Electrochem. Soc., 138, 550 (1990)Google Scholar
12 Huang, J., Kwok, K., Nguyen, B.C., Donohoe, K., Electrochem. Soc. Extended Abstract, 92–1, 284 (1993).Google Scholar