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Stresses in Amorphous Gd-Fe Alloy Thin Films Deposited by Magnetron Sputtering

Published online by Cambridge University Press:  16 February 2011

Zhi-Feng Zhou ,
Qi-Gang Zhou  and
Yu-Dian Fan
Zhi-Feng Zhou
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA.
Qi-Gang Zhou
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA.
Yu-Dian Fan
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA.
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Abstract

Amorphous Gd-Fe alloy thin films were made by D.C. planar magnetron sputtering under various deposition conditions (e.g., film thickness, composition, working pressure of Ar, negative bias voltage and deposition rate). The stress, the film composition and the content of entrapped Ar in the films were measured respectively. The experimental results showed that in this case the working pressure of Ar and the negative bias voltage did not change the composition of the films, and the stresses were all compressive except for the films deposited in a very high working pressure of Ar. The origin of the compressive stress can be attributed to the atomic peening effect produced by fast neutral working gas atoms rebounded from the sputtering target. The magnitude of the compressive stress depends not only on the amount of Ar atoms incorporated in the films but also on the film microstructure such as the packing density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 91
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Naoe, M., Yamanaka, S., and Hoshi, Y., IEEE Trans. Magn. MAG–16, 646 (1986).Google Scholar
2. Katayama, T., Hirano, M., Hoizumi, Y., Kawanishi, K., and Tsushima, T., Trans. Magn. MAG–13, 1603 (1977).Google Scholar
3. Suzuki, Y., Takayama, S., Kirino, F., and Ohta, N., IEEE Trans. Magn. MAG–23, 2275 (1987).Google Scholar
4. Tsunashima, S., Takagi, H., Kamegaki, K., Fujii, T., and Uchiyama, S., IEEE Trans. Magn. MAG–14, 844 (1978).Google Scholar
5. Takagi, H., Tsunashima, S., and Uchiyama, S., J. Appl. Phys. 50, 1642 (1979).Google Scholar
6. Niihara, T., Takayama, S., and Sugita, Y., IEEE Trans. Magn. MAG–21, 1638 (1985).Google Scholar
7. Chen, Q.M., Fan, Y.D., and Li, H.D., Vacuum, 38, 491 (1988).Google Scholar
8. Zhou, Z.F. and Fan, Y.D., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J.C., Nix, W.D., Barnett, D.M., and Smith, D.A. (Mat. Res. Soc. Proc. 130, Pittsburgh, PA 1988) PP. 383–388.Google Scholar
9. Stobiecki, T. and Jankowski, H., J. Magn. Magn. Mat. 23, 299 (1981).Google Scholar
10. Hoffman, R.W., in Physics of Nonmetallic Thin Films, edited by Dupuy, C.H.S. and Cachard, A. (NATO Adv. Study Inst. Ser.,1976), B14, p.273.Google Scholar
11. Konishi, H., Euriki, S., and Matsumoto, G., Jap. J. Appl. Phys. 19, 1009 (1980).Google Scholar
12. Hoffman, D.W. and Thornton, J.A., J. Vac. Sci. Technol. 20, 355 (1982).Google Scholar
13. Cuomo, J.J. and Gambino, R.J., J. Vac. Sci. Technol. 14, 152 (1977).Google Scholar
14. Nowick, A.S. and Mader, S.R., IBM J. Dev. Res. 13, 358 (1965).Google Scholar
15. Cuomo, J.J., Harper, J.M.E., Guarnieri, C.R., Yee, D.S., Attanasio, L.J., Angilello, J., Wu, C.T., and Hammond, R.H., J. Vac. Sci. Technol. 20, 349 (1982).Google Scholar