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Stress-assisted Copper-induced Lateral Growth of Polycrystalline Germanium

Published online by Cambridge University Press:  01 February 2011

B. Hekmatshoar ,
D. Shahrjerdi ,
S. Mohajerzadeh ,
A. Khakifirooz ,
M. Robertson  and
A. Afzali-Kusha
B. Hekmatshoar
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, smohajer@vlsi.uwaterloo.ca.
D. Shahrjerdi
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, smohajer@vlsi.uwaterloo.ca.
S. Mohajerzadeh
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, smohajer@vlsi.uwaterloo.ca.
A. Khakifirooz
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, khaki@mtl.mit.edu.
M. Robertson
Affiliation:
Department of Physics, Acadia University, Wolfville, NS B4P 2R6, Canada
A. Afzali-Kusha
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, smohajer@vlsi.uwaterloo.ca.
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Abstract

Lateral growth of poly-Ge at temperatures as low as 150°C is reported. External mechanical stress has been properly manipulated to drive the low temperature Cu-induced crystallization of poly-Ge wherever Cu is deposited to form the crystallization seed for lateral growth. Uniaxial compressive stress has been externally applied to the Ge layer by bending the flexible PET substrate inward. A 10-hour period thermo-mechanical post-treatment in the presence of 0.05% equivalent compressive strain leads to a growth rate of 2.5 μm/hour in the direction of the applied stress and 1.8 μm/hour in the perpendicular direction, as confirmed by SEM analysis. We believe that partial growth of the Cu-seeded poly-Ge region in the form of tetragonal structures is the key feature which leads to the lateral growth of the pure-Ge strip. Elimination of the compressive stress hinders the lateral growth completely, even at reasonably high temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U6.10
Copyright
Copyright © Materials Research Society 2004

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References

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