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Stress Metrology : The challenge for the next generation of engineered wafers

Published online by Cambridge University Press:  17 March 2011

Antoine Tiberj ,
Vincent Paillard ,
Cécile Aulnette ,
Nicolas Daval ,
Konstantin K. Bourdelle ,
Myriam Moreau ,
Mark Kennard  and
Ian Cayrefourcq
Antoine Tiberj
Affiliation:
Soitec, Parc technologique des Fontaines, 38190 Bernin, France
Vincent Paillard
Affiliation:
LPST, Paul Sabatier University, 118 route de Narbonne, 31062 Toulouse Cedex 4, France
Cécile Aulnette
Affiliation:
Soitec, Parc technologique des Fontaines, 38190 Bernin, France
Nicolas Daval
Affiliation:
Soitec, Parc technologique des Fontaines, 38190 Bernin, France
Konstantin K. Bourdelle
Affiliation:
Soitec, Parc technologique des Fontaines, 38190 Bernin, France
Myriam Moreau
Affiliation:
Jobin-Yvon, 231 rue de Lille, 59650 Villeneuve d'Ascq, France
Mark Kennard
Affiliation:
Soitec, Parc technologique des Fontaines, 38190 Bernin, France
Ian Cayrefourcq
Affiliation:
Soitec, Parc technologique des Fontaines, 38190 Bernin, France
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Abstract

Raman spectroscopy is a powerful and versatile technique for stress measurements in complex stacks of thin crystalline layers at macroscopic and microscopic scales. Using such a technique we show that thick SiGe layers epitaxially grown using graded buffer method are fully relaxed (>95%) at a macroscopic scale but exhibit a small strain modulation at a microscopic scale. For the first time we report the results of Raman micro-mapping of stress distribution in SGOI wafers produced by Smart Cut™ technology. We conclude that Smart Cut™ is a unique method to manufacture the next generation of engineered wafers that can combine strained and/or relaxed SiGe alloys, Si and Ge films, while keeping their initial strain properties at both scales. It is important to develop Raman spectroscopy tool for in-line process control in fabrication of strained Silicon On Insulator (sSOI) wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B3.1
Copyright
Copyright © Materials Research Society 2004

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