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Stress Enhanced Arsenic Diffusion In Titanium Salicided Junctions By Implantation Into C49 TiSi2 and Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

Dong Kyun Sohn ,
Ji-Soo Park ,
Jong-Uk Bae ,
Yun-Jun Hub  and
Jin Won Park
Dong Kyun Sohn
Affiliation:
R&D Division, LG Semicon Co.Ltd., I Hyangieong-dong, Hungduk-gu, Cheongju-si 361–480, Korea
Ji-Soo Park
Affiliation:
R&D Division, LG Semicon Co.Ltd., I Hyangieong-dong, Hungduk-gu, Cheongju-si 361–480, Korea
Jong-Uk Bae
Affiliation:
R&D Division, LG Semicon Co.Ltd., I Hyangieong-dong, Hungduk-gu, Cheongju-si 361–480, Korea
Yun-Jun Hub
Affiliation:
R&D Division, LG Semicon Co.Ltd., I Hyangieong-dong, Hungduk-gu, Cheongju-si 361–480, Korea
Jin Won Park
Affiliation:
R&D Division, LG Semicon Co.Ltd., I Hyangieong-dong, Hungduk-gu, Cheongju-si 361–480, Korea
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Abstract

We studied reverse leakage current in n+/p titanium-salicided shallow junctions using C49 Ti-silicide as a diffusion source. After Ti deposition, rapid thermal annealing (RTA) was performed to form the C49 Ti-silicide. Subsequently, arsenic ions were implanted and a 2nd RTA was carried out at 850 °C to form the low resistivity C54 Ti-silicide. In spite of no drive-in process following the 2nd annealing, the implanted As diffused well into Si substrate and the reverse leakage current of the n+/p junctions was reduced to two orders of magnitude lower. Since the high chemical affinity of As to Ti-silicide trapped the dopant in the silicide, it has been known that Ti or Ti-silicide cannot be used as a diffusion source. However, in this work, we found that the C49 Ti-silicide acted as a diffusion source of As ions. The reason of fast diffusivity is attributed to the generation of high tensile stress induced by As implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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