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Stress Characterization of Sputtered PZT Films

Published online by Cambridge University Press:  10 February 2011

M. J. Mescher ,
M. L. Reed  and
T. E. Schlesinger
M. J. Mescher
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213, ed@ece.cmu.edu
M. L. Reed
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213, ed@ece.cmu.edu
T. E. Schlesinger
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213, ed@ece.cmu.edu
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Abstract

In this work we show that stress in sputter deposited lead zirconate titanate (PZT) films can be controlled by variation of both deposition and annealing temperatures. These films were deposited via reactive rf magnetron sputtering using a Pb1.25Zr. 52Ti. 48 03 composite target and 02 as a reactive gas in an Ar ambient. Variation of stress as a function of deposition and annealing temperature was characterized. The deposited film composition was determined from x-ray fluorescence measurements. There is a strong correlation between film stress, composition, and crystallographic orientation. Stress was determined from the deflection of released SiO 2/Pt cantilever beams. We show that films with a wide range of intrinsic stress can be deposited which still exhibit good piezoelectric properties, making the fabrication of reliable thin film piezoelectric actuators possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 403
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1]Spierings, G.A.C.M., et. al., “Stress in Pt/Pb(Zr,Ti)0 3/Pt Capacitors for Integrated Ferroelectric Devices,” Proceedings of the 1994 IEEE International Symposium on Applications of Ferroelectrics, U niversity Park, PA, 29–32, 7–10 Aug. 1994.Google Scholar
[2]Mescher, M. et. al., “Piezoelectric Lead-Zirconate-Titanate Actuator Films for Microelectromechanical Systems Applications,” Proceedings of the Eighth IEEE Workshop on Micro Electro Mechanical Systems (MEMS-95), Amsterdam, the Netherlands, 261-66, 1995.Google Scholar
[3]Peterson, C. R., “X-ray Texture Analysis of Oriented PZT Thin Films,”; Materials Research Society Symposium Proceedings: Ferroelectric Thin Films V 433, 1996.Google Scholar
[4]AI-Shareef, H. N. et. al., “Metallization Schemes for Dielectric Thin Film Capacitors,” Journal of Materials Research 12, 347–54, Feb. 1997.Google Scholar
[5]Sreenivas, ”K. et. al. “Investigation of Pt/Ti Bilayer Metallization on Silicon for Ferroelectric Thin Film Integration,” J. Appl. Phys.75 232–239, Jan. 1994.Google Scholar
[6]Kim, Sung-Tae et. al., “Investigation of Pt/Ti Bottom Electrodes for Pb(Zr,Ti)0 3 Films,”;Japanese Journal of Applied Physics 36, 294–300, Jan. 1997.Google Scholar
[7]Kim, B. Ea et. al, “Pt Electrode Investigation and Electrical Properties of RF Magnetron Sputtered Pb(Zr,Ti)03,”;MicroElectronic Engineering 29, 231–234, 1995.Google Scholar
[8]Eichorst, D. J. and Baron, C. J., “Effects of Platinum Electrode Structures on Crystallinity and Electrical Properties of MOD-Prepared PZT Capacitors,”;Materials Research Society Symposium Proceedings: Ferroelectric Thin Films III 310, 201–208, 1993.Google Scholar
[9]Sayer, M. et. al. “Piezoelectric and Capacitive Microactuators and Devices,” Materials Research Society Symposium Proceedings: FerroelectricT hin Films 1II 310, 37–46, 1993.Google Scholar
[10]Chen, H. D. et. al. “Development and Electrical Characterization of Lead Zirconate Titanate Thick Films on Silicon Substrates,” Proceedings of the 1994 IEEE International Symposium on Applications of Ferroelectrics, University Park, PA, 495-8, 7–10 Aug. 1994.Google Scholar
[11 ]Cullity, B. D., Elements of X-ray Diffraction, Addison Wesley, 1978.Google Scholar
[12]Bolz, T., “Handbook of Tables for Applied Engineering Science,”; Cleveland Rubber Company, 1970.Google Scholar
[13]Mescher, M., Reed, M. L., and Schlesinger, T. E., “Stress Control in Sputtered Silicon Nitride Films,” Materials Research Society Symposium Proceedings: Polycrystalline Thin Films II, 1997.Google Scholar
[14]Thornton, John A., “Influence of Apparatus Geometry and Deposition Conditions on the Structure and topography of Thick Sputtered Coatings,”;J. Vac. Sci. Technology 11 666–670 July/Aug. 1974.Google Scholar