Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-20T04:12:10.444Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress and Microstructure Evolution during the Deposition and Crystallization of DCMagnetron Sputter Deposited Amorphous ITO

Published online by Cambridge University Press:  21 March 2011

Hyo-Young Yeom ,
Courtney Lanier ,
Eric Chason  and
David C. Paine
Hyo-Young Yeom
Affiliation:
Brown University, Division of Engineering, Box D Providence, RI 02910
Courtney Lanier
Affiliation:
Brown University, Division of Engineering, Box D Providence, RI 02910
Eric Chason
Affiliation:
Brown University, Division of Engineering, Box D Providence, RI 02910
David C. Paine
Affiliation:
Brown University, Division of Engineering, Box D Providence, RI 02910
Get access

Abstract

The deposition of ITO onto glass substrates at room temperature results in a metastable amorphous phase that undergoes crystallization at remarkably low homologous temperatures (T/Tm<0.2). We have evaluated ITO film stress in the as-deposited condition and during crystallization of 200 nm thick films isothermally heated at 250°C. To explore the effect of stoichiometry on the amorphous structure, ITO films were deposited under low, optimum, and high (0, 0.1, and 2 vol %, respectively) oxygen partial pressures. In this report we have correlated changes in stress with changes in the electron transport characteristics (hall mobility and carrier density) and film microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F2.5
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ishibashi, S., Higuchi, Y., Ota, Y. and Nakamura, K., J. Vac. Sci. Technol. A8(3), 1403 (1990).Google Scholar
2. Higuchi, Masatoshi, Uekusa, Shinichiro, Nakano, Ryotaro and Yokogawa, Kazuhiko, J. Appl. Phys., 74(11), 6710 (1993).Google Scholar
3. Shin, S.H., Shin, J.H., Park, K.J., Ishida, T. Tabata, O. and Kim, H.H., Thin Solid Films, 341, 225 (1999).Google Scholar
4. May, C. and Strumpfel, J., Thin Solid Films, 351, 48 (1999).Google Scholar
5. Shigesato, Y., Koshi-ishi, R., Kawashima, T., and Ohsako, J., Vaccum 59, 614(2000)Google Scholar
6. Salehi, A., Thin Solid Films, 324 214 (1998).Google Scholar
7. Bhagwat, S., Howson, R.P., Surface Coatings Technology, 111, 163 (1999).Google Scholar
8. Meng, Li-jian, Santos, M.P.dos, Applied Surface Science, 120, 243 (1997).Google Scholar
9. Meng, Li-jian, Santos, M.P. dos, Thin Solid Films, 322, 56 (1998).Google Scholar
10. Morikawa, Hiroshi, Fujita, Miya, Thin Solid Films, 359, 61 (2000).Google Scholar
11. Vink, T.J., Walrave, W., Daams, J.L.C., Baarslag, P.C., Meeraker, J.E.A.M. van den, Thin Solid Films, 266, 145 (1995).Google Scholar